公开(公告)号：US20200144365A1

公开(公告)日：2020-05-07

申请号：US16180486

申请日：2018-11-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： George R. MULFINGER ,  Timothy J. MCARDLE ,  Judson R. HOLT ,  Steffen A. SICHLER ,  Ömür I. AYDIN ,  Wei HONG ,  Yi QI ,  Hui ZANG ,  Liu JIANG

IPC: H01L29/08 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/28 ,  H01L29/423

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to faceted epitaxial source/drain regions and methods of manufacture. The structure includes: a gate structure over a substrate; an L-shaped sidewall spacer located on sidewalls of the gate structure and extending over the substrate adjacent to the gate structure; and faceted diffusion regions on the substrate, adjacent to the L-shaped sidewall spacer.