公开(公告)号：US20190259670A1

公开(公告)日：2019-08-22

申请号：US15899508

申请日：2018-02-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei L. Zhuang ,  Balasubramanian Pranatharthiharan ,  Lars Liebmann ,  Ruilong Xie ,  Terence Hook

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66

Abstract: In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.