公开(公告)号：US20200227404A1

公开(公告)日：2020-07-16

申请号：US16244169

申请日：2019-01-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui Zang ,  Guowei Xu ,  Jiehui Shu ,  Ruilong Xie ,  Yurong Wen ,  Garo J. Derderian ,  Shesh M. Pandey ,  Laertis Economikos

IPC: H01L27/06 ,  H01L49/02 ,  H01L21/762 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L23/522

Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.