公开(公告)号：US09123773B1

公开(公告)日：2015-09-01

申请号：US14461015

申请日：2014-08-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： HongLiang Shen ,  Fangyu Wu ,  Haigou Huang ,  Xusheng Wu ,  Changyong Xiao ,  Wanxum He

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/76224 ,  H01L21/3086 ,  H01L21/76232 ,  H01L29/66795

Abstract: Methods of forming a T-shaped SBD using a single-mask process flow are disclosed. Embodiments include providing a substrate having STI regions; forming a hard mask layer over the substrate and the STI regions, the hard mask having an opening laterally separated from the STI regions; forming a recess in the substrate through the opening, the recess having a first width; forming spacers on sidewalls of the recess, with a gap therebetween; forming a trench in the substrate through the gap, the trench having a second width less than the first; removing the spacers; removing the hard mask layer; filling the trench and the recess with an oxide layer, forming a T-shaped STI region; forming another hard mask layer on a portion of the T-shaped STI region; and revealing a Fin by removing portions of the STI regions and the T-shaped STI region.

Abstract translation: 公开了使用单掩模工艺流程形成T形SBD的方法。 实施例包括提供具有STI区域的基板; 在所述基板和所述STI区域上形成硬掩模层，所述硬掩模具有与所述STI区域横向分离的开口; 通过所述开口在所述基板中形成凹部，所述凹部具有第一宽度; 在凹槽的侧壁上形成间隔物，其间具有间隙; 通过所述间隙在所述衬底中形成沟槽，所述沟槽具有小于所述第一宽度的第二宽度; 去除垫片; 去除硬掩模层; 用氧化物层填充沟槽和凹部，形成T形STI区域; 在T形STI区域的一部分上形成另一个硬掩模层; 并且通过去除STI区域和T形STI区域的部分来显露Fin。

公开(公告)号：US08871651B1

公开(公告)日：2014-10-28

申请号：US13940535

申请日：2013-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Dae Han Choi ,  Zhuangfei Chen ,  Fangyu Wu

IPC: H01L21/302

CPC classification number: H01L21/3086 ,  H01L29/66795

Abstract: A mask for use in fabricating one or more semiconductor devices is fabricated by: providing sacrificial spacing structures disposed over a substrate structure, and including protective hard masks at upper surfaces of the spacing structures; disposing a sidewall spacer layer conformally over the sacrificial spacing structures; selectively removing the sidewall spacer layer from above the sacrificial spacing structures to expose the protective hard masks of the spacing structures, the selectively removing including leaving sidewall spacers along sidewalls of the sacrificial spacing structures; providing a protective material over the substrate structure; and removing the exposed protective hard masks from the sacrificial spacing structures, and thereafter, removing remaining sacrificial spacing structures and the protective material, leaving the sidewall spacers over the substrate structure as a mask.

Abstract translation: 通过以下方式制造用于制造一个或多个半导体器件的掩模：提供设置在衬底结构上的牺牲间隔结构，并且在间隔结构的上表面处包括保护性硬掩模; 将侧壁间隔层保形地设置在牺牲间隔结构上; 从所述牺牲间隔结构的上方选择性地去除所述侧壁间隔层，以露出所述间隔结构的保护性硬掩模，所述选择性地移除包括沿着所述牺牲间隔结构的侧壁留下侧壁间隔物; 在衬底结构上提供保护材料; 并且从牺牲间隔结构中去除暴露的保护性硬掩模，然后去除剩余的牺牲间隔结构和保护材料，将侧壁间隔物留在衬底结构上作为掩模。