公开(公告)号：US20170117179A1

公开(公告)日：2017-04-27

申请号：US15257245

申请日：2016-09-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank Koschinsky ,  Bernd Hintze ,  Heiko Weber

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76862 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method includes forming a diffusion barrier over a semiconductor structure. The formation of the diffusion barrier includes performing a first tantalum deposition process, the first tantalum deposition process forming a first tantalum layer over the semiconductor structure, performing a treatment of the first tantalum layer, and performing a second tantalum deposition process after the treatment of the first tantalum layer. The treatment modifies at least a portion of the first tantalum layer. The second tantalum deposition process forms a second tantalum layer over the first tantalum layer.

公开(公告)号：US10090195B2

公开(公告)日：2018-10-02

申请号：US15257245

申请日：2016-09-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank Koschinsky ,  Bernd Hintze ,  Heiko Weber

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A method includes forming a diffusion barrier over a semiconductor structure. The formation of the diffusion barrier includes performing a first tantalum deposition process, the first tantalum deposition process forming a first tantalum layer over the semiconductor structure, performing a treatment of the first tantalum layer, and performing a second tantalum deposition process after the treatment of the first tantalum layer. The treatment modifies at least a portion of the first tantalum layer. The second tantalum deposition process forms a second tantalum layer over the first tantalum layer.