公开(公告)号：US20150179640A1

公开(公告)日：2015-06-25

申请号：US14134358

申请日：2013-12-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hoon Kim ,  Kisik Choi ,  Jae Young Lee

IPC: H01L27/088 ,  H01L21/28 ,  H01L21/265 ,  H01L21/223 ,  H01L21/8234 ,  H01L29/51

CPC classification number: H01L21/28158 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/66545

Abstract: A multi-device semiconductor structure including a p-type logic device, a p-type memory device, a n-type logic device and a n-type memory device are provided on a bulk silicon substrate. Each of these devices includes a dielectric layer and either a n-type or a p-type work function layer disposed over the dielectric layer. Some of the various device types of the multi-device semiconductor structure are protected, and impurities, such as aluminum and/or nitrogen, are added to the exposed work function layers to achieve one or more other desired work functions with different threshold voltages.

Abstract translation: 包括p型逻辑器件，p型存储器件，n型逻辑器件和n型存储器件的多器件半导体结构设置在体硅衬底上。 这些器件中的每一个包括电介质层和设置在电介质层上的n型或p型功函数层。 多器件半导体结构的各种器件类型中的一些被保护，并且诸如铝和/或氮的杂质被添加到暴露的功函数层中以实现具有不同阈值电压的一个或多个其它期望的功函数。