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1.发明授权Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials 有权使用CMOS兼容的反铁电高k材料的复杂电路元件和电容器公开(公告)号：US09318315B2
公开(公告)日：2016-04-19
申请号：US14176208
申请日：2014-02-10
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Johannes Mueller , Dina H. Triyoso , Mark Gerard Nolan , Wenke Weinreich , Konrad Seidel , Patrick Polakowski
CPC classification number: H01L21/02107 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L29/66181 , H01L29/94
Abstract: The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or insulating layer is formed over the substrate. Furthermore, an electrode layer is disposed over the dielectric layer or insulating layer. Herein, the dielectric layer or insulating layer is in an antiferroelectric phase. In various illustrative embodiments, the integrated circuit element may implement a MOSFET structure or a capacitor structure.
Abstract translation: 本发明提供集成电路元件和具有高容量的集成电路元件和MIM / MIS电容器，以及集成电路元件和集成MIM / MIS电容器的形成方法以及控制集成电路元件和集成MIM / MIS电容器的方法。 在各个方面，提供基板，并且在基板上形成电介质层或绝缘层。 此外，在电介质层或绝缘层上设置电极层。 这里，电介质层或绝缘层处于反铁电相。 在各种示例性实施例中，集成电路元件可以实现MOSFET结构或电容器结构。
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2.发明申请COMPLEX CIRCUIT ELEMENT AND CAPACITOR UTILIZING CMOS COMPATIBLE ANTIFERROELECTRIC HIGH-K MATERIALS 有权复合电路元件和电容器采用CMOS兼容抗电材料高K材料公开(公告)号：US20150014813A1
公开(公告)日：2015-01-15
申请号：US14176208
申请日：2014-02-10
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Johannes Mueller , Dina H. Triyoso , Mark Gerard Nolan , Wenke Weinreich , Konrad Seidel , Patrick Polakowski
CPC classification number: H01L21/02107 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L29/66181 , H01L29/94
Abstract: The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or insulating layer is formed over the substrate. Furthermore, an electrode layer is disposed over the dielectric layer or insulating layer. Herein, the dielectric layer or insulating layer is in an antiferroelectric phase. In various illustrative embodiments, the integrated circuit element may implement a MOSFET structure or a capacitor structure.
Abstract translation: 本发明提供集成电路元件和具有高容量的集成电路元件和MIM / MIS电容器，以及集成电路元件和集成MIM / MIS电容器的形成方法以及控制集成电路元件和集成MIM / MIS电容器的方法。 在各个方面，提供基板，并且在基板上形成电介质层或绝缘层。 此外，在电介质层或绝缘层上设置电极层。 这里，电介质层或绝缘层处于反铁电相。 在各种示例性实施例中，集成电路元件可以实现MOSFET结构或电容器结构。
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