公开(公告)号：US20190305105A1

公开(公告)日：2019-10-03

申请号：US15943272

申请日：2018-04-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qun GAO ,  Christopher NASSAR ,  Sugirtha KRISHNAMURTHY ,  Domingo Antonio FERRER LUPPI ,  John SPORRE ,  Shahab SIDDIQUI ,  Beth BAUMERT ,  Abu ZAINUDDIN ,  Jinping LIU ,  Tae Jeong LEE ,  Luigi PANTISANO ,  Heather LAZAR ,  Hui ZANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423

Abstract: A method for controlling the gate length within a FinFET device to increase power performance and the resulting device are provided. Embodiments include forming a vertical gate to extend over a plurality of fins; depositing a respective oxide layer over each of a plurality of skirt regions formed at respective points of intersection of the vertical gate with the plurality of fins; and oxidizing each oxide layer to form a plurality of oxidized gate skirts.

公开(公告)号：US20150377956A1

公开(公告)日：2015-12-31

申请号：US14314693

申请日：2014-06-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： William MCMAHON ,  Andreas KERBER ,  Luigi PANTISANO ,  Suresh UPPAL

IPC: G01R31/28

CPC classification number: G01R31/2875 ,  G01R31/2879

Abstract: A methodology for inline characterization and temperature profiling that enables parallel measurement of device characteristics at multiple temperatures and the resulting device are disclosed. Embodiments may include calibrating a first device under test (DUT) with respect to at least one heating structure in a metal layer of an integrated circuit (IC), applying a heater voltage to the at least one heating structure, and measuring at least one characteristic of the first DUT at a first temperature corresponding to the heater voltage.

Abstract translation: 公开了一种在线表征和温度分析的方法，其可以在多个温度下平行测量器件特性，并且得到所得到的器件。 实施例可以包括相对于集成电路（IC）的金属层中的至少一个加热结构校准被测试的第一器件（DUT），向至少一个加热结构施加加热器电压，以及测量至少一个特性 在与加热器电压对应的第一温度下的第一DUT。