公开(公告)号：US20150377956A1

公开(公告)日：2015-12-31

申请号：US14314693

申请日：2014-06-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： William MCMAHON ,  Andreas KERBER ,  Luigi PANTISANO ,  Suresh UPPAL

IPC: G01R31/28

CPC classification number: G01R31/2875 ,  G01R31/2879

Abstract: A methodology for inline characterization and temperature profiling that enables parallel measurement of device characteristics at multiple temperatures and the resulting device are disclosed. Embodiments may include calibrating a first device under test (DUT) with respect to at least one heating structure in a metal layer of an integrated circuit (IC), applying a heater voltage to the at least one heating structure, and measuring at least one characteristic of the first DUT at a first temperature corresponding to the heater voltage.

Abstract translation: 公开了一种在线表征和温度分析的方法，其可以在多个温度下平行测量器件特性，并且得到所得到的器件。 实施例可以包括相对于集成电路（IC）的金属层中的至少一个加热结构校准被测试的第一器件（DUT），向至少一个加热结构施加加热器电压，以及测量至少一个特性 在与加热器电压对应的第一温度下的第一DUT。