公开(公告)号：US10910471B2

公开(公告)日：2021-02-02

申请号：US16032878

申请日：2018-07-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jianwei Peng ,  Sang Woo Lim ,  Matthew Wahlquist Stoker ,  Huang Liu ,  Jinping Liu

IPC: H01L29/76 ,  H01L29/08 ,  H01L21/8238 ,  H01L27/092

Abstract: A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3× fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3× fin pitch, a TS formed on the RSD, and an ILD formed over the TS.