公开(公告)号：US09812396B1

公开(公告)日：2017-11-07

申请号：US15175495

申请日：2016-06-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jason Eugene Stephens ,  Guillaume Bouche ,  Shreesh Narasimha ,  Patrick Ryan Justison ,  Byoung Youp Kim ,  Craig Michael Child, Jr.

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311

CPC classification number: H01L23/5286 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283

Abstract: A method includes providing a starting interconnect structure for semiconductor device(s), the starting interconnect structure including a first metallization layer with a first power rail. The method further includes forming a second metallization layer over the first metallization layer with a second power rail, and directly electrically connecting the first power rail and the second power rail, the directly electrically connecting including forming metal-filled vias between the first power rail and the second power rail. The method further includes forming additional metallization layer(s) over the second metallization layer with additional power rail(s), and directly electrically connecting each of the additional power rail(s) to a power rail of a metallization layer directly below.