公开(公告)号：US20250054908A1

公开(公告)日：2025-02-13

申请号：US18232876

申请日：2023-08-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett Cucci ,  Ramsey Hazbun ,  Richard Rassel ,  Zhong-Xiang He ,  Patrick Mitchell

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/48

Abstract: Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers, and each semiconductor layer comprises a compound semiconductor material. The structure further comprises an isolation structure disposed about the section of the layer stack, and a device in the device region. The isolation structure penetrates through the layer stack to the substrate.

公开(公告)号：US20220357530A1

公开(公告)日：2022-11-10

申请号：US17313472

申请日：2021-05-06

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett Cucci ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Edward Kiewra ,  Robert K. Leidy

IPC: G02B6/42

Abstract: Structures for an edge coupler of a photonics chip and methods of forming an edge coupler for a photonics chip. The structure includes a waveguide core on a dielectric layer, as well as an interconnect structure including a interlayer dielectric layer positioned over the dielectric layer and an opening penetrating through the interlayer dielectric layer to the waveguide core. A region of the interlayer dielectric layer is positioned to overlap with a portion of the waveguide core. The region of the interlayer dielectric layer has a surface that is rounded with a curvature.

公开(公告)号：US11774686B2

公开(公告)日：2023-10-03

申请号：US17313472

申请日：2021-05-06

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett Cucci ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Edward Kiewra ,  Robert K. Leidy

IPC: G02B6/42

CPC classification number: G02B6/4206

Abstract: Structures for an edge coupler of a photonics chip and methods of forming an edge coupler for a photonics chip. The structure includes a waveguide core on a dielectric layer, as well as an interconnect structure including a interlayer dielectric layer positioned over the dielectric layer and an opening penetrating through the interlayer dielectric layer to the waveguide core. A region of the interlayer dielectric layer is positioned to overlap with a portion of the waveguide core. The region of the interlayer dielectric layer has a surface that is rounded with a curvature.

公开(公告)号：US11520113B1

公开(公告)日：2022-12-06

申请号：US17356898

申请日：2021-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Abdelsalam Aboketaf ,  Yusheng Bian ,  Edward Kiewra ,  Brett Cucci

IPC: G02B6/42 ,  H01L31/0232 ,  H01L31/0203 ,  G02B6/136

Abstract: Structures for a photodetector or terminator and methods of fabricating a structure for a photodetector or terminator. The structure includes a waveguide core, a light-absorbing layer having a sidewall, and a taper positioned adjacent to the sidewall of the light-absorbing layer. The taper extends laterally from the sidewall of the light-absorbing layer to overlap with the waveguide core, and the taper has a thickness that varies with position relative to the sidewall of the light-absorbing layer. For example, the thickness of the taper may decrease with increasing distance from the sidewall of the light-absorbing layer.