公开(公告)号：US10923579B2

公开(公告)日：2021-02-16

申请号：US16854552

申请日：2020-04-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hans-Juergen Thees ,  Peter Baars ,  Elliot John Smith

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L29/423 ,  H01L21/285 ,  H01L27/12 ,  H01L21/306 ,  H01L21/308 ,  H01L21/8238 ,  H01L21/8234

Abstract: A device including an SOI substrate and an isolation structure positioned at least partially in a trench that extends through a buried insulation layer and into a semiconductor bulk substrate of the SOI substrate is disclosed. The isolation structure includes a first dielectric layer positioned in a lower portion of the trench, a first material layer positioned above the first dielectric layer, the first material layer having a material different from a material of the first dielectric layer, and a second dielectric layer positioned above the first material layer, the second dielectric layer having a material different from the material of the first material layer.

公开(公告)号：US11195935B2

公开(公告)日：2021-12-07

申请号：US16531617

申请日：2019-08-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hans-Juergen Thees ,  Peter Baars

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/266 ,  H01L27/11 ,  H01L21/3105 ,  H01L29/786 ,  H01L29/08 ,  H01L21/762

Abstract: A semiconductor device is disclosed including a gate electrode structure and raised drain and source regions that extend to a first height level and a sidewall spacer element positioned adjacent the sidewalls of the gate electrode structure between the raised drain and source regions and the gate electrode structure. The sidewall spacer element includes an upper portion that extends above the first height level wherein an inner part of the spacer element faces the gate electrode structure and extends to a second height level that is less than a third height level of an outer part of the upper portion of the spacer element.