公开(公告)号：US20220093744A1

公开(公告)日：2022-03-24

申请号：US17029667

申请日：2020-09-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Siva P. Adusumilli ,  Yves Ngu ,  Michael Zierak

IPC: H01L29/10 ,  H01L21/763 ,  H01L29/04 ,  H01L27/12

Abstract: Body-contacted semiconductor structures and methods of forming a body-contacted semiconductor structure. A semiconductor substrate, which contains of a single-crystal semiconductor material, includes a device region and a plurality of body contact regions each comprised of the single-crystal semiconductor material. A polycrystalline layer and polycrystalline regions are formed in the semiconductor substrate. The polycrystalline regions are positioned between the polycrystalline layer and the device region, and the polycrystalline regions have a laterally-spaced arrangement with a gap between each adjacent pair of the polycrystalline regions. One of the plurality of body contact regions is arranged in the gap between each adjacent pair of the polycrystalline regions.

公开(公告)号：US12183814B1

公开(公告)日：2024-12-31

申请号：US18615615

申请日：2024-03-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Steven J. Bentley ,  Francois Hebert ,  Lawrence Selvaraj Susai ,  Johnatan A Kantarovsky ,  Michael Zierak ,  Mark D. Levy ,  John Ellis-Monaghan

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.

公开(公告)号：US11545549B2

公开(公告)日：2023-01-03

申请号：US17029667

申请日：2020-09-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Siva P. Adusumilli ,  Yves Ngu ,  Michael Zierak

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/04 ,  H01L21/763

Abstract: Body-contacted semiconductor structures and methods of forming a body-contacted semiconductor structure. A semiconductor substrate, which contains of a single-crystal semiconductor material, includes a device region and a plurality of body contact regions each comprised of the single-crystal semiconductor material. A polycrystalline layer and polycrystalline regions are formed in the semiconductor substrate. The polycrystalline regions are positioned between the polycrystalline layer and the device region, and the polycrystalline regions have a laterally-spaced arrangement with a gap between each adjacent pair of the polycrystalline regions. One of the plurality of body contact regions is arranged in the gap between each adjacent pair of the polycrystalline regions.