公开(公告)号：US20240162232A1

公开(公告)日：2024-05-16

申请号：US17985861

申请日：2022-11-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vibhor JAIN ,  Crystal R. KENNEY ,  John J. PEKARIK

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L23/66

CPC classification number: H01L27/1203 ,  H01L21/76267 ,  H01L21/76283 ,  H01L21/84 ,  H01L23/66 ,  H01L2223/6672

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a substrate with trap rich and low resistivity regions and methods of manufacture. The structure includes: a high resistivity semiconductor substrate; an active device over the high resistivity semiconductor substrate; and a low resistivity region floating in the high resistivity semiconductor substrate and which is below the active device.