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公开(公告)号:US20180323159A1
公开(公告)日:2018-11-08
申请号:US15773152
申请日:2015-12-22
申请人: Intel Corporation
IPC分类号: H01L23/66 , H01L23/538 , H01L23/552 , H01L23/00 , H01L25/18 , H01Q1/38
CPC分类号: H01L23/66 , H01L23/5383 , H01L23/5384 , H01L23/5385 , H01L23/552 , H01L24/16 , H01L24/20 , H01L25/105 , H01L25/18 , H01L2223/6622 , H01L2223/6672 , H01L2223/6677 , H01L2224/04105 , H01L2224/12105 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16265 , H01L2225/1035 , H01L2225/1058 , H01L2924/10253 , H01L2924/1032 , H01L2924/10329 , H01L2924/1033 , H01L2924/15192 , H01L2924/18162 , H01L2924/19011 , H01L2924/19104 , H01L2924/19105 , H01L2924/30111 , H01L2924/3025 , H01Q1/243 , H01Q1/38
摘要: Embodiments of the invention include a microelectronic device that includes an overmolded component having a first die with a silicon based substrate. A second die is coupled to the first die with the second die being formed with compound semiconductor materials in a different substrate. A substrate is coupled to the first die. The substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
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2.
公开(公告)号:US10075143B2
公开(公告)日:2018-09-11
申请号:US15342045
申请日:2016-11-02
申请人: IQE, PLC
发明人: Rodney Pelzel , Rytis Dargis , Andrew Clark , Howard Williams , Patrick Chin , Michael Lebby
IPC分类号: H01L27/06 , H03H1/00 , H01L21/00 , H01L29/737 , H01L23/66 , H01L29/66 , H01L29/778 , H01L41/08 , H01L41/083 , H01L41/319 , H03H3/02 , H03H3/08 , H03H9/17
CPC分类号: H03H1/0007 , H01L23/66 , H01L27/0688 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/778 , H01L41/0815 , H01L41/083 , H01L41/319 , H01L2223/6672 , H03H3/02 , H03H3/08 , H03H9/175 , H03H2001/0064 , H03H2001/0085 , H03H2003/025
摘要: Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
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公开(公告)号:US20180174948A1
公开(公告)日:2018-06-21
申请号:US15386097
申请日:2016-12-21
申请人: GLOBALFOUNDRIES INC.
IPC分类号: H01L23/373 , H01L23/48 , H01L23/528 , H01L23/66 , H01L21/683 , H01L21/768 , H01L21/84 , H01L27/12 , H01L21/56
CPC分类号: H01L21/76895 , H01L21/6835 , H01L21/76898 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/66 , H01L27/1203 , H01L28/40 , H01L29/402 , H01L29/7833 , H01L2221/68363 , H01L2223/6666 , H01L2223/6672 , H01L2223/6677
摘要: Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier. The molding compound handler substrate provides backside isolation that prevents unwanted noise coupling.
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公开(公告)号:US20180158786A1
公开(公告)日:2018-06-07
申请号:US15371280
申请日:2016-12-07
申请人: NXP USA, INC.
发明人: JOSEPH STAUDINGER , JAMES KREHBIEL
CPC分类号: H01L23/645 , H01L21/707 , H01L23/66 , H01L27/016 , H01L28/10 , H01L28/20 , H01L28/60 , H01L2223/6672
摘要: A reference circuit includes an integrated circuit (IC) formed on a semiconductor substrate including a first spiral inductor and a second spiral inductor. The first spiral inductor is formed from a first metal layer over the substrate. The second spiral inductor is formed from a second metal layer. The second spiral inductor is offset from the first spiral inductor and includes a first portion overlapping the first spiral inductor. A first capacitor includes a first terminal coupled to receive a radio frequency (RF) signal and a second terminal coupled to a first terminal of the first spiral inductor, and second capacitor includes a first terminal coupled to a second terminal of the first spiral inductor.
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公开(公告)号:US09979361B1
公开(公告)日:2018-05-22
申请号:US15391485
申请日:2016-12-27
申请人: NXP USA, Inc.
CPC分类号: H03F1/565 , H01L23/66 , H01L2223/6611 , H01L2223/6672 , H03F3/189 , H03F3/195 , H03F3/20 , H03F3/213 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/451
摘要: A packaged RF amplifier device includes a transistor, a first input circuit, and a second input circuit. The first input circuit includes a first series inductance coupled between an input lead and a first node, a second series inductance coupled between the first node and the transistor's control terminal, and a first shunt capacitance coupled between the first node and a ground reference. The second input circuit includes a first shunt inductance and a second shunt capacitance coupled in series between the input lead and the ground reference. The first input circuit and the second input circuit create a fundamental frequency match for the device. The second series inductance and the first shunt capacitance present a short circuit to the ground reference for RF energy at a second harmonic frequency.
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公开(公告)号:US20180083582A1
公开(公告)日:2018-03-22
申请号:US15600094
申请日:2017-05-19
发明人: Kazutaka TAKAGI
CPC分类号: H03F3/601 , H01L23/66 , H01L24/49 , H01L27/06 , H01L2223/6627 , H01L2223/6655 , H01L2223/6672 , H01L2224/32245 , H01L2224/48195 , H01L2224/49175 , H01L2224/73265 , H01L2924/13064 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/30111 , H03F1/32 , H03F3/005 , H03F3/195 , H03F3/213 , H03F2200/108 , H03F2200/171 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/391 , H03F2200/451
摘要: A microwave semiconductor device of an embodiment includes a package, a semiconductor amplifying element, an output matching circuit, and a smoothing circuit. The package includes a metal base plate, a frame body bonded to a surface of the metal base plate, an input feedthrough part, and an output feedthrough part. The semiconductor amplifying element has an output electrode. The output matching circuit includes an output matching capacitor, and a first bonding wire connected to the output matching capacitor and the output electrode. The smoothing circuit includes a smoothing capacitor, and a second bonding wire. The smoothing capacitor is connected by the second bonding wire to a position in the output matching circuit at which capacitive reactance component of a load impedance seen from the output matching capacitor is smaller than inductive reactance component of the load impedance seen from the output electrode of the semiconductor amplifying element.
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公开(公告)号:US20180005966A1
公开(公告)日:2018-01-04
申请号:US15603230
申请日:2017-05-23
发明人: William R. Smith , Jaroslaw Adamski , Dan William Nobbe , Edward Nicholas Comfoltey , Jingbo Wang
CPC分类号: H01L23/66 , H01L2223/6672 , H01L2924/0002 , H03H7/01 , H03H7/0153 , H03H7/06 , H03H7/12 , H03H7/1758 , H03H2007/013 , H03H2210/036 , Y10T29/4913 , H01L2924/00
摘要: An apparatus and method for a frequency based integrated circuit that selectively filters out unwanted bands or regions of interfering frequencies utilizing one or more tunable notch or bandpass filters or tunable low or high pass filters capable of operating across multiple frequencies and multiple bands in noisy RF environments. The tunable filters are fabricated within the same integrated circuit package as the associated frequency based circuitry, thus minimizing R, L, and C parasitic values, and also allowing residual and other parasitic impedance in the associated circuitry and IC package to be absorbed and compensated.
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公开(公告)号:US09859176B1
公开(公告)日:2018-01-02
申请号:US15339309
申请日:2016-10-31
发明人: Tang-Jung Chiu , Mill-Jer Wang , Hung-Chih Lin , Hao Chen
CPC分类号: H01L22/22 , G01R1/06772 , G01R31/2822 , G01R31/2886 , H01L22/34 , H01L23/5256 , H01L23/66 , H01L2223/6672
摘要: A semiconductor device is disclosed. The semiconductor device includes: a System on Chip (SoC) die; an integrated passive device (IPD); and a first switch, coupled between the SoC die and the IPD; wherein the IPD and the SoC die are disposed in different wafers and bonded together, and the first switch is controlled to disconnect the IPD from the SoC die when the IPD is under a test; and the first switch is controlled to connect the IPD with the SoC die when the IPD is not under the test. A test system for testing an IPD of a semiconductor device and an associated method are also disclosed.
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9.
公开(公告)号:US20170372982A1
公开(公告)日:2017-12-28
申请号:US15194183
申请日:2016-06-27
发明人: David J. Howard
IPC分类号: H01L23/373 , H01L27/06 , H01L23/66 , H01L27/092
CPC分类号: H01L23/3731 , H01L21/76251 , H01L23/291 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/66 , H01L24/05 , H01L27/0623 , H01L27/082 , H01L27/092 , H01L27/1203 , H01L2223/6616 , H01L2223/6672 , H01L2223/6683 , H01L2224/04042 , H01L2224/05025 , H01L2224/05567
摘要: A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive but electrically isolating layer is configured to dissipate heat from the at least one semiconductor device integrated in the semiconductor wafer. The thermally conductive but electrically isolating layer is selected from the group consisting of aluminum nitride, beryllium oxide, and aluminum oxide. The at least one semiconductor device is selected from the group consisting of a complementary-metal-oxide-semiconductor (CMOS) switch and a bipolar complementary-metal-oxide-semiconductor (BiCMOS) switch. The semiconductor structure also includes at least one pad opening extending from the back side of the semiconductor wafer to a contact pad.
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公开(公告)号:US09843301B1
公开(公告)日:2017-12-12
申请号:US15210680
申请日:2016-07-14
发明人: Paul L. Rodgers , Dah-Weih Duan
CPC分类号: H01P1/183 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2223/6672 , H01P1/184 , H01P3/003 , H01P5/10 , H01P11/003
摘要: A transformer balun fabricated in silicon and including a series of alternating metal layers and dielectric layers that define first and second outer conductors that are part of a coaxial structure. Each dielectric layer includes a plurality of conductive vias extending through the dielectric layer to provide electrical contact between opposing metal layers, where a top metal layer forms a top wall of each outer conductor and a bottom metal layer forms a bottom wall of each outer conductor and the other metal layers and the dielectric layers define sidewalls of the outer conductors. Inner conductors extends down both of the first and second outer conductors and a first output line is electrically coupled to a sidewall of the first outer conductor and a second output line is electrically coupled to a sidewall of the second outer conductor.
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