公开(公告)号：US11177404B2

公开(公告)日：2021-11-16

申请号：US16740719

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

公开(公告)号：US11374143B2

公开(公告)日：2022-06-28

申请号：US16740664

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/103 ,  G02B6/13 ,  H01L31/0392 ,  G02B6/12

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

公开(公告)号：US20210217916A1

公开(公告)日：2021-07-15

申请号：US16740664

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/103 ,  G02B6/13 ,  G02B6/12 ,  H01L31/0392

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

公开(公告)号：US20210217912A1

公开(公告)日：2021-07-15

申请号：US16740719

申请日：2020-01-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/103 ,  H01L31/028 ,  H01L31/18

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

公开(公告)号：US11810989B2

公开(公告)日：2023-11-07

申请号：US17504614

申请日：2021-10-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

CPC classification number: H01L31/035281 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1872

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

公开(公告)号：US20220037545A1

公开(公告)日：2022-02-03

申请号：US17504614

申请日：2021-10-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.