公开(公告)号：US20230343778A1

公开(公告)日：2023-10-26

申请号：US17724548

申请日：2022-04-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Prantik Mahajan ,  Ajay ,  Vishal Ganesan ,  Ruchil Jain ,  Souvick Mitra

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: Structures for an electrostatic discharge device including a silicon-controlled rectifier and methods of forming a structure for an electrostatic discharge device that includes a silicon-controlled rectifier. The structure includes a first well in a semiconductor substrate, a second well and a third well in the first well, and a fourth well in the first well. The first well has a first conductivity type, and the second well and the third well have the first conductivity type. The fourth well positioned in a lateral direction between the second well and the third well, and the fourth well has a second conductivity type opposite to the first conductivity type. The second well, the third well, and the fourth well are positioned in a vertical direction between the first well and a top surface of the semiconductor substrate.

公开(公告)号：US20240014204A1

公开(公告)日：2024-01-11

申请号：US17857439

申请日：2022-07-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vishal Ganesan ,  Prantik Mahajan ,  Nandha Kumar Subramani ,  Souvick Mitra

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well, the second well and the first doped region have a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type. The structure further comprises a deep well in the semiconductor substrate. The deep well has the second conductivity type, the first well is positioned in a vertical direction between the deep well and the top surface of the semiconductor substrate, and the second well is positioned in the vertical direction between the deep well and the top surface of the semiconductor substrate.

公开(公告)号：US20240429227A1

公开(公告)日：2024-12-26

申请号：US18213442

申请日：2023-06-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sagar Premnath Karalkar ,  Vishal Ganesan ,  Kyong Jin Hwang ,  Souvick Mitra

IPC: H01L27/02

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises adjacent first and second gates over a semiconductor substrate, a source adjacent to the first gate, and a drain adjacent to the second gate. The source includes a first well in the semiconductor substrate, a second well in the semiconductor substrate, and a doped region. The first well and the doped region have a first conductivity type, and the second well has a second conductivity type opposite from the first conductivity type. The doped region has a first portion that overlaps with the first well, and the doped region has a second portion that overlaps with the second well.