公开(公告)号：US11757026B2

公开(公告)日：2023-09-12

申请号：US17072992

申请日：2020-10-16

Applicant: Google LLC

Inventor： Stephen M. Cea ,  Cory E. Weber ,  Patrick H. Keys ,  Seiyon Kim ,  Michael G. Haverty ,  Sadasivan Shankar

IPC: H01L29/775 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/78 ,  H01L29/16 ,  B82Y40/00

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696 ,  B82Y40/00 ,  H01L29/16

Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.