公开(公告)号：US20230111689A1

公开(公告)日：2023-04-13

申请号：US18081177

申请日：2022-12-14

Applicant: Google LLC

Inventor： Stephen M. Cea ,  Annalisa Cappellani ,  Martin D. Giles ,  Rafael Rios ,  Seiyon Kim ,  Kelin J. Kuhn

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L21/268 ,  H01L29/78

Abstract: Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

公开(公告)号：US11757026B2

公开(公告)日：2023-09-12

申请号：US17072992

申请日：2020-10-16

Applicant: Google LLC

Inventor： Stephen M. Cea ,  Cory E. Weber ,  Patrick H. Keys ,  Seiyon Kim ,  Michael G. Haverty ,  Sadasivan Shankar

IPC: H01L29/775 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/78 ,  H01L29/16 ,  B82Y40/00

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696 ,  B82Y40/00 ,  H01L29/16

Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.

公开(公告)号：US11552197B2

公开(公告)日：2023-01-10

申请号：US16740089

申请日：2020-01-10

Applicant: Google LLC

Inventor： Stephen M. Cea ,  Annalisa Cappellani ,  Martin D. Giles ,  Rafael Rios ,  Seiyon Kim ,  Kelin J. Kuhn

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/41 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L21/268 ,  B82Y40/00

Abstract: Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

公开(公告)号：US12125916B2

公开(公告)日：2024-10-22

申请号：US18081177

申请日：2022-12-14

Applicant: Google LLC

Inventor： Stephen M. Cea ,  Annalisa Cappellani ,  Martin D. Giles ,  Rafael Rios ,  Seiyon Kim ,  Kelin J. Kuhn

IPC: H01L29/786 ,  H01L21/268 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  B82Y40/00

CPC classification number: H01L29/78618 ,  H01L21/268 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/66977 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/78651 ,  H01L29/78684 ,  H01L29/78696 ,  B82Y40/00 ,  H01L29/7839

Abstract: Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.