公开(公告)号：US5432471A

公开(公告)日：1995-07-11

申请号：US113896

申请日：1993-08-31

申请人： Gourab Majumdar ,  Shinji Hatae ,  Mitsuharu Tabata ,  Takashi Marumo

发明人： Gourab Majumdar ,  Shinji Hatae ,  Mitsuharu Tabata ,  Takashi Marumo

IPC分类号： H03K17/12 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14 ,  H03K17/16 ,  H03K17/56

CPC分类号： H03K17/168 ,  H03K17/0822 ,  H03K17/0828 ,  H03K17/166

摘要： In order to prevent a malfunction caused by an electrical noise and limit an excessive main current at a high speed while cutting off the same to a value close to zero, the main current is regulated by an IGBT (1) which is connected with a load. A part of this main current is shunted to another IGBT (2). The as-shunted current flows through a resistor (3), to be converted to a voltage across the resistor (3). When the main current is excessively increased by shorting of the load or the like, this voltage exceeds a prescribed value so that a transistor (5) and a thyristor (7) enter conducting states. Consequently, a voltage across a gate (G) and an emitter (E) of the IGBT (1) is so reduced as to cut off the main current. The transistor (5) prevents the main current from excessive increase since the same has a high speed of response, while the thyristor (7) cuts off the main current to zero since the same has lower resistance in conduction.

摘要翻译： 为了防止由电噪声引起的故障，并且在将其截止到接近零的值的同时将高电流限制在过大的主电流，主电流由与负载连接的IGBT（1） 。 该主电流的一部分被分流到另一个IGBT（2）。 分流电流流过电阻器（3），以转换成电阻器（3）两端的电压。 当通过负载等的短路使主电流过度增加时，该电压超过规定值，使得晶体管（5）和晶闸管（7）进入导通状态。 因此，IGBT（1）的栅极（G）和发射极（E）之间的电压被减小以截断主电流。 由于晶体管（5）具有较高的响应速度，所以晶体管（5）防止主电流过度增加，而晶闸管（7）将主电流切断为零，因为该电流具有较低的导通电阻。

公开(公告)号：US5786973A

公开(公告)日：1998-07-28

申请号：US629756

申请日：1996-04-09

申请人： Gourab Majumdar ,  Takashi Marumo

发明人： Gourab Majumdar ,  Takashi Marumo

IPC分类号： H01L25/07 ,  H01L25/18 ,  H02H7/12 ,  H02M1/00 ,  H02M1/32 ,  H02M7/23 ,  H02M7/5387 ,  H02H3/00

CPC分类号： H02M7/493 ,  H02H7/1206 ,  H02M1/32 ,  H02M7/23 ,  H02M7/5387 ,  H01L2924/0002 ,  Y10T307/729

摘要： A semiconductor power module is configured to prevent concentration of load in a certain semiconductor power switching element. A diagnosis circuit (PC) of a module (10a or 10b) compares a sensing signal (SSE) for example, which is sent out from a sensing circuit (Se) and is proportional to the collector current of an IGBT element, with a reference voltage, and judges presence or absence of abnormality in the collector current. If abnormal, a shutdown signal (S.sub.SD) is sent out to a shutdown circuit (SD), and the IGBT element is cut off, and simultaneously an abnormality detection signal (S.sub.F01 or S.sub.F02) is sent out to the other module (10b or 10a). The diagnosis circuit (PC of the module (10b or 10a) receives the abnormality detection signal (S.sub.F01 or S.sub.F02), and sends out the shutdown signal (S.sub.SD) to the shutdown circuit (SD), thereby shutting down the IGBT element. Since the transmission timing of both shutdown signals (S.sub.SD) coincides, the both IGBT elements are cut off at the same time. Therefore, due to earlier shutdown of one IGBT element, concentration of load in the other delayed IGBT element may be avoided.

摘要翻译： 半导体功率模块被配置为防止某个半导体功率开关元件中的负载集中。 模块（10a或10b）的诊断电路（PC）比较例如从感测电路（Se）发送并与IGBT元件的集电极电流成比例的感测信号（SSE）与参考 电压，判断集电极电流的有无异常。 如果异常，则关闭信号（SSD）发送到关闭电路（SD），IGBT元件被切断，同时将异常检测信号（SF01或SF02）发送到另一个模块（10b或10a） ）。 诊断电路（模块（10b或10a）的PC接收到异常检测信号（SF01或SF02），并向关闭电路（SD）发送关机信号（SSD），从而关闭IGBT元件，由于 两个关断信号（SSD）的发送定时一致，两个IGBT元件同时被切断，因此由于一个IGBT元件的更早的停止，可以避免另一个延迟IGBT元件的负载集中。