公开(公告)号：US20230087835A1

公开(公告)日：2023-03-23

申请号：US17795570

申请日：2020-11-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masataka IKESU ,  Ikuo ARATA ,  Yoshihiro ITO ,  Toshimichi ISHIZUKA

IPC: G01N21/95 ,  G01N21/88 ,  G01N21/71

Abstract: The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

公开(公告)号：US20250093279A1

公开(公告)日：2025-03-20

申请号：US18937872

申请日：2024-11-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masataka IKESU ,  Ikuo ARATA ,  Yoshihiro ITO ,  Toshimichi ISHIZUKA

IPC: G01N21/95 ,  G01N21/71 ,  G01N21/88

Abstract: The semiconductor failure analysis device 1 includes: a tester 2 configured to apply a stimulation signal to a semiconductor device 100; a light source 3 configured to generate irradiation light L1 with which the semiconductor device 100 is irradiated; a solid immersion lens 4 disposed on an optical path of the irradiation light L1; a light detection unit 5 configured to receive reflected light L2 and to output a detection signal according to the reflected light L2; an optical system 6 disposed between the light source 3 and the solid immersion lens 4 to emit the irradiation light L1 to the semiconductor device 100 via the solid immersion lens 4 and disposed between the solid immersion lens 4 and the light detection unit 5 to emit the reflected light L2 received via the solid immersion lens 4 to the light detection unit 5; and a computer 7 configured to obtain information on a failure portion of the semiconductor device 100 using the detection signal. The light source 3 emits the irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens 4 is formed of GaAs.

公开(公告)号：US20220406644A1

公开(公告)日：2022-12-22

申请号：US17772596

申请日：2020-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Toshimichi ISHIZUKA ,  Masataka IKESU

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/67

Abstract: A failure analysis unit is a wafer conveyance unit configured to convey a wafer while holding the wafer in a semiconductor failure analysis apparatus, the wafer conveyance unit including: a placement table configured to fix a wafer at a predetermined observation position; and a wafer chuck configured to convey the wafer while holding the wafer to the observation position. The wafer chuck includes a plurality of holding members (protruding portions) provided so as to face a side surface of the wafer, and holds the wafer by sandwiching a peripheral portion of the wafer W with the plurality of holding members.