WAFER CONVEYANCE UNIT AND WAFER CONVEYANCE METHOD

    公开(公告)号:US20220406644A1

    公开(公告)日:2022-12-22

    申请号:US17772596

    申请日:2020-11-09

    Abstract: A failure analysis unit is a wafer conveyance unit configured to convey a wafer while holding the wafer in a semiconductor failure analysis apparatus, the wafer conveyance unit including: a placement table configured to fix a wafer at a predetermined observation position; and a wafer chuck configured to convey the wafer while holding the wafer to the observation position. The wafer chuck includes a plurality of holding members (protruding portions) provided so as to face a side surface of the wafer, and holds the wafer by sandwiching a peripheral portion of the wafer W with the plurality of holding members.

    SEMICONDUCTOR FAILURE ANALYSIS DEVICE AND SEMICONDUCTOR FAILURE ANALYSIS METHOD

    公开(公告)号:US20240361382A1

    公开(公告)日:2024-10-31

    申请号:US18579888

    申请日:2022-03-15

    CPC classification number: G01R31/311 G01R31/2879

    Abstract: A semiconductor failure analysis device includes a first analysis unit that emits first irradiation light along a first path set on a first main surface of a semiconductor device, a second analysis unit that emits second irradiation light along a second path set on a second main surface that is a back side of the first main surface, an electric signal acquisition unit that receives an electric signal output from the semiconductor device irradiated with the first irradiation light and the second irradiation light, and a computer that controls the second analysis unit. A size of a first irradiation region is different from a size of a second irradiation region. The computer emits the first irradiation light and the second irradiation light while a state where the entire second irradiation region overlaps the first irradiation region is maintained.

    SEMICONDUCTOR FAILURE ANALYSIS DEVICE

    公开(公告)号:US20230087835A1

    公开(公告)日:2023-03-23

    申请号:US17795570

    申请日:2020-11-24

    Abstract: The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

    SOLID IMMERSION LENS HOLDER AND IMAGE ACQUISITION DEVICE

    公开(公告)号:US20170285296A1

    公开(公告)日:2017-10-05

    申请号:US15507252

    申请日:2015-09-24

    Abstract: A solid immersion lens holder includes a first member having a first opening disposing a spherical face portion therein so that a part of the spherical face portion protrudes toward an objective lens side and a second member having a second opening disposing a contact portion therein so that a contact face protrudes toward a side opposite to the objective lens side. The first member includes three plate members disposed on the objective lens side with respect to the first opening. Each of the three plate members is provided with a protrusion portion capable of contacting the spherical face portion.

    SEMICONDUCTOR FAILURE ANALYSIS DEVICE

    公开(公告)号:US20250093279A1

    公开(公告)日:2025-03-20

    申请号:US18937872

    申请日:2024-11-05

    Abstract: The semiconductor failure analysis device 1 includes: a tester 2 configured to apply a stimulation signal to a semiconductor device 100; a light source 3 configured to generate irradiation light L1 with which the semiconductor device 100 is irradiated; a solid immersion lens 4 disposed on an optical path of the irradiation light L1; a light detection unit 5 configured to receive reflected light L2 and to output a detection signal according to the reflected light L2; an optical system 6 disposed between the light source 3 and the solid immersion lens 4 to emit the irradiation light L1 to the semiconductor device 100 via the solid immersion lens 4 and disposed between the solid immersion lens 4 and the light detection unit 5 to emit the reflected light L2 received via the solid immersion lens 4 to the light detection unit 5; and a computer 7 configured to obtain information on a failure portion of the semiconductor device 100 using the detection signal. The light source 3 emits the irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens 4 is formed of GaAs.

    SEMICONDUCTOR FAULT ANALYSIS DEVICE AND SEMICONDUCTOR FAULT ANALYSIS METHOD

    公开(公告)号:US20230061399A1

    公开(公告)日:2023-03-02

    申请号:US17799009

    申请日:2021-01-13

    Abstract: A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

    SEMICONDUCTOR FAULT ANALYSIS DEVICE AND SEMICONDUCTOR FAULT ANALYSIS METHOD

    公开(公告)号:US20240393384A1

    公开(公告)日:2024-11-28

    申请号:US18795589

    申请日:2024-08-06

    Abstract: A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

    SEMICONDUCTOR FAILURE ANALYSIS DEVICE AND SEMICONDUCTOR FAILURE ANALYSIS METHOD

    公开(公告)号:US20230072615A1

    公开(公告)日:2023-03-09

    申请号:US17798980

    申请日:2020-11-17

    Abstract: A semiconductor failure analysis device includes an analysis part that analyzes a failure place in a semiconductor device; a marking part that irradiates the semiconductor device with laser light; a device arrangement part in which a wafer chuck, which holds the semiconductor device and on which an alignment target is provided, moves relative to the analysis part and the marking part; and a control part that outputs commands. The control part moves the wafer chuck to a position at which the analysis part is capable of taking an image of the alignment target, then outputs an alignment command that causes the marking part to be aligned with the analysis part with the alignment target as a reference, and irradiates the semiconductor device with laser light in a state in which a positional relationship between the marking part and the analysis part is maintained.

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