公开(公告)号：US09842647B1

公开(公告)日：2017-12-12

申请号：US15267124

申请日：2016-09-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： John Paul Strachan ,  Brent Buchanan ,  Emmanuelle Merced Grafals

IPC: G11C11/00 ,  G11C13/00 ,  G11C29/52

CPC classification number: G11C13/0069 ,  G11C13/0033 ,  G11C27/00 ,  G11C29/52

Abstract: Examples include a method of programming resistive random access memory (RRAM) array for analog computations. In some examples, a selected RRAM cell of the RRAM array may be programmed with a selected target conductance and a programmed conductance error of the selected RRAM cell may be determined. A neighboring RRAM cell may be programmed with an error corrected target conductance that is a function of a neighboring target conductance and the programmed conductance error of the selected RRAM cell. The neighboring RRAM cell may be in a same row or a same column as the selected RRAM cell. The selected RRAM cell and neighboring RRAM cell are programmed such that the RRAM array is programmed for an analog computation.