公开(公告)号：US20140318957A1

公开(公告)日：2014-10-30

申请号：US13873199

申请日：2013-04-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： James Elmer Abbott ,  Greg Scott Long ,  Michael A. Delos-Reyes

IPC: G01N27/26

CPC classification number: G01N27/403 ,  C23C14/34

Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.

Abstract translation: 在电介质材料体中形成一个阱，并且具有围绕阱的顶侧的倒角边缘。 顶部电极层位于主体的顶面和孔的倒角边缘上。 底部电极位于井的地板上。

公开(公告)号：US20190285569A1

公开(公告)日：2019-09-19

申请号：US16434549

申请日：2019-06-07

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： James Elmer Abbott, JR. ,  Greg Scott Long ,  Michael A. Delos-Reyes

IPC: G01N27/403 ,  C23C14/34

Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.

公开(公告)号：US09557288B2

公开(公告)日：2017-01-31

申请号：US13873199

申请日：2013-04-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： James Elmer Abbott, Jr. ,  Greg Scott Long ,  Michael A. Delos-Reyes

IPC: C23C14/00 ,  C23C14/32 ,  G01N27/403 ,  C23C14/34

CPC classification number: G01N27/403 ,  C23C14/34

Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.

Abstract translation: 在电介质材料体中形成一个阱，并且具有围绕阱的顶侧的倒角边缘。 顶部电极层位于主体的顶面和井的倒角边缘上。 底部电极位于井的地板上。

公开(公告)号：US10359392B2

公开(公告)日：2019-07-23

申请号：US15381041

申请日：2016-12-15

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： James Elmer Abbott, Jr. ,  Greg Scott Long ,  Michael A. Delos-Reyes

IPC: G01N27/403 ,  C23C14/34

Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.

公开(公告)号：US20170160224A1

公开(公告)日：2017-06-08

申请号：US15381041

申请日：2016-12-15

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： James Elmer Abbott, JR. ,  Greg Scott Long ,  Michael A. Delos-Reyes

IPC: G01N27/403 ,  C23C14/34

CPC classification number: G01N27/403 ,  C23C14/34

Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.