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公开(公告)号:US20140318957A1
公开(公告)日:2014-10-30
申请号:US13873199
申请日:2013-04-29
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: James Elmer Abbott , Greg Scott Long , Michael A. Delos-Reyes
IPC: G01N27/26
CPC classification number: G01N27/403 , C23C14/34
Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.
Abstract translation: 在电介质材料体中形成一个阱,并且具有围绕阱的顶侧的倒角边缘。 顶部电极层位于主体的顶面和孔的倒角边缘上。 底部电极位于井的地板上。
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公开(公告)号:US20190285569A1
公开(公告)日:2019-09-19
申请号:US16434549
申请日:2019-06-07
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: James Elmer Abbott, JR. , Greg Scott Long , Michael A. Delos-Reyes
IPC: G01N27/403 , C23C14/34
Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.
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公开(公告)号:US09557288B2
公开(公告)日:2017-01-31
申请号:US13873199
申请日:2013-04-29
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: James Elmer Abbott, Jr. , Greg Scott Long , Michael A. Delos-Reyes
IPC: C23C14/00 , C23C14/32 , G01N27/403 , C23C14/34
CPC classification number: G01N27/403 , C23C14/34
Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.
Abstract translation: 在电介质材料体中形成一个阱,并且具有围绕阱的顶侧的倒角边缘。 顶部电极层位于主体的顶面和井的倒角边缘上。 底部电极位于井的地板上。
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公开(公告)号:US10359392B2
公开(公告)日:2019-07-23
申请号:US15381041
申请日:2016-12-15
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: James Elmer Abbott, Jr. , Greg Scott Long , Michael A. Delos-Reyes
IPC: G01N27/403 , C23C14/34
Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.
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公开(公告)号:US20170160224A1
公开(公告)日:2017-06-08
申请号:US15381041
申请日:2016-12-15
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: James Elmer Abbott, JR. , Greg Scott Long , Michael A. Delos-Reyes
IPC: G01N27/403 , C23C14/34
CPC classification number: G01N27/403 , C23C14/34
Abstract: A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well.
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