公开(公告)号：US20200163652A1

公开(公告)日：2020-05-28

申请号：US16596917

申请日：2019-10-09

Applicant: Hitachi, Ltd.

Inventor： Shinya KAJIYAMA ,  Kengo IMAGAWA ,  Yoshihiro HAYASHI

IPC: A61B8/00 ,  G01S7/52

Abstract: A switch circuit connected to a transducer, a reception circuit connected to the switch circuit, a first switch element connected to a reception terminal provided between the switch circuit and the reception circuit, a first resistance element connected to a control terminal of the switch circuit, a second resistance element provided inside the reception circuit, and a second switch element provided inside the reception circuit are provided.

公开(公告)号：US20160043720A1

公开(公告)日：2016-02-11

申请号：US14806940

申请日：2015-07-23

Applicant: HITACHI, LTD.

Inventor： Shunsuke KUBOTA ,  Hiroyasu YOSHIZAWA ,  Na LI ,  Yoshihiro HAYASHI ,  Tatsuya ODAWARA

IPC: H03K19/00 ,  H03K5/08 ,  H03K5/003 ,  H03K17/687

CPC classification number: H03K19/0016 ,  H03K5/003 ,  H03K5/084 ,  H03K17/6874

Abstract: Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage.The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC. The first floating gate voltage control circuit FGC operates at a voltage of 5 V or lower as a power-supply voltage, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit FGC sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. A ground voltage is supplied to the opposed surface of the semiconductor substrate.

Abstract translation: 提供了具有高压模拟开关电路并且可在低电源电压下操作的半导体集成电路器件。 半导体集成电路器件具有布置在半导体衬底上的半导体区域中的高压MOSFET。 半导体集成电路器件包括：第一高电压MOSFET HN1; 具有连接到第一高压MOSFET的源极端子的源极端子和与第一高压MOSFET的栅极端子连接的栅极端子的第二高压MOSFET HN2; 和第一浮栅电压控制电路FGC。 第一浮栅电压控制电路FGC作为电源电压工作在5V或更低的电压，并且当接通第一高压MOSFET和第二高压MOSFET时，第一浮栅电压控制电路FGC 将第一高压MOSFET的源极端子中的电压设置为基准电压，将与电源电压对应的浮动电压与基准电压相加，并将相加的电压提供给第一高电压的栅极端子 MOSFET和第二高压MOSFET。 接地电压被提供给半导体衬底的相对表面。

公开(公告)号：US20210386401A1

公开(公告)日：2021-12-16

申请号：US17229916

申请日：2021-04-14

Applicant: HITACHI, LTD.

Inventor： Shinya KAJIYAMA ,  Yoshihiro HAYASHI ,  Tadahiro NABETA

IPC: A61B8/00 ,  B06B1/02 ,  G01S15/89

Abstract: Provided are a two-dimensional array ultrasonic probe and an addition circuit that switch an addition unit of a reception signal according to a reception channel of a main unit while preventing an increase in a chip area. The addition circuit includes, between addition output terminals that output an addition signal and transducer channels, wirings provided for each transducer channel row including the transducer channels arranged in a vertical direction on a subarray basis and coupled to the transducer channels of the corresponding transducer channel row, output switches provided for each of the wirings and coupled to the corresponding transducer channel row wiring, and an inter-output switch that couples wirings corresponding to transducer channel rows adjacent in the horizontal direction via the output switches.

公开(公告)号：US20160020760A1

公开(公告)日：2016-01-21

申请号：US14794427

申请日：2015-07-08

Applicant: HITACHI, LTD.

Inventor： Na LI ,  Hiroyasu YOSHIZAWA ,  Satoshi HANAZAWA ,  Shunsuke KUBOTA ,  Yoshihiro HAYASHI

IPC: H03K17/16 ,  H03K3/012

CPC classification number: H03K17/161 ,  H03K17/163 ,  H03K2217/0054

Abstract: Provided is a switching circuit capable of transmitting a signal with large amplitude and large current while suppressing deterioration when a small-amplitude signal is transmitted. The switching circuit 100 includes a first terminal a, a second terminal b, a first switch 1, a second switch 2, a first separation switch 3a, and a second separation switch 3b. The first switch 1 connects the first terminal a and the second terminal b according to a control signal. The second switch 2 has a first node n1 and a second node n2, and connects between the nodes in synchronization with the first switch 1. The first separation switch 3a transmits a signal of the first node n1 to the second node n2 when an electric potential of the first node n1 is higher than that of the second node n2 by more than a predetermined electric potential. The second separation switch 3b transmits a signal of the first node n1 to the second terminal b when an electric potential of the first node n1 is higher than an electric potential of the second node n2 by more than a predetermined electric potential.

Abstract translation: 提供一种能够在抑制发送小振幅信号时的劣化的同时，以大的振幅和大的电流发送信号的切换电路。 开关电路100包括第一端子a，第二端子b，第一开关1，第二开关2，第一分离开关3a和第二分离开关3b。 第一开关1根据控制信号连接第一端子a和第二端子b。 第二开关2具有第一节点n1和第二节点n2，并且与第一开关1同步地在节点之间连接。当第一节点n1的电位为电位时，第一分离开关3a将第一节点n1的信号发送到第二节点n2 的第一节点n1比第二节点n2多一个预定电位。 当第一节点n1的电位高于第二节点n2的电位大于预定电位时，第二分离开关3b将第一节点n1的信号发送到第二端子b。