公开(公告)号：US20160043720A1

公开(公告)日：2016-02-11

申请号：US14806940

申请日：2015-07-23

Applicant: HITACHI, LTD.

Inventor： Shunsuke KUBOTA ,  Hiroyasu YOSHIZAWA ,  Na LI ,  Yoshihiro HAYASHI ,  Tatsuya ODAWARA

IPC: H03K19/00 ,  H03K5/08 ,  H03K5/003 ,  H03K17/687

CPC classification number: H03K19/0016 ,  H03K5/003 ,  H03K5/084 ,  H03K17/6874

Abstract: Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage.The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC. The first floating gate voltage control circuit FGC operates at a voltage of 5 V or lower as a power-supply voltage, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit FGC sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. A ground voltage is supplied to the opposed surface of the semiconductor substrate.

Abstract translation: 提供了具有高压模拟开关电路并且可在低电源电压下操作的半导体集成电路器件。 半导体集成电路器件具有布置在半导体衬底上的半导体区域中的高压MOSFET。 半导体集成电路器件包括：第一高电压MOSFET HN1; 具有连接到第一高压MOSFET的源极端子的源极端子和与第一高压MOSFET的栅极端子连接的栅极端子的第二高压MOSFET HN2; 和第一浮栅电压控制电路FGC。 第一浮栅电压控制电路FGC作为电源电压工作在5V或更低的电压，并且当接通第一高压MOSFET和第二高压MOSFET时，第一浮栅电压控制电路FGC 将第一高压MOSFET的源极端子中的电压设置为基准电压，将与电源电压对应的浮动电压与基准电压相加，并将相加的电压提供给第一高电压的栅极端子 MOSFET和第二高压MOSFET。 接地电压被提供给半导体衬底的相对表面。