SWITCHING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    1.
    发明申请
    SWITCHING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    开关电路和半导体集成电路设备

    公开(公告)号:US20160020760A1

    公开(公告)日:2016-01-21

    申请号:US14794427

    申请日:2015-07-08

    Applicant: HITACHI, LTD.

    CPC classification number: H03K17/161 H03K17/163 H03K2217/0054

    Abstract: Provided is a switching circuit capable of transmitting a signal with large amplitude and large current while suppressing deterioration when a small-amplitude signal is transmitted. The switching circuit 100 includes a first terminal a, a second terminal b, a first switch 1, a second switch 2, a first separation switch 3a, and a second separation switch 3b. The first switch 1 connects the first terminal a and the second terminal b according to a control signal. The second switch 2 has a first node n1 and a second node n2, and connects between the nodes in synchronization with the first switch 1. The first separation switch 3a transmits a signal of the first node n1 to the second node n2 when an electric potential of the first node n1 is higher than that of the second node n2 by more than a predetermined electric potential. The second separation switch 3b transmits a signal of the first node n1 to the second terminal b when an electric potential of the first node n1 is higher than an electric potential of the second node n2 by more than a predetermined electric potential.

    Abstract translation: 提供一种能够在抑制发送小振幅信号时的劣化的同时,以大的振幅和大的电流发送信号的切换电路。 开关电路100包括第一端子a,第二端子b,第一开关1,第二开关2,第一分离开关3a和第二分离开关3b。 第一开关1根据控制信号连接第一端子a和第二端子b。 第二开关2具有第一节点n1和第二节点n2,并且与第一开关1同步地在节点之间连接。当第一节点n1的电位为电位时,第一分离开关3a将第一节点n1的信号发送到第二节点n2 的第一节点n1比第二节点n2多一个预定电位。 当第一节点n1的电位高于第二节点n2的电位大于预定电位时,第二分离开关3b将第一节点n1的信号发送到第二端子b。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    2.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    半导体集成电路设备

    公开(公告)号:US20160043720A1

    公开(公告)日:2016-02-11

    申请号:US14806940

    申请日:2015-07-23

    Applicant: HITACHI, LTD.

    CPC classification number: H03K19/0016 H03K5/003 H03K5/084 H03K17/6874

    Abstract: Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage.The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC. The first floating gate voltage control circuit FGC operates at a voltage of 5 V or lower as a power-supply voltage, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit FGC sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. A ground voltage is supplied to the opposed surface of the semiconductor substrate.

    Abstract translation: 提供了具有高压模拟开关电路并且可在低电源电压下操作的半导体集成电路器件。 半导体集成电路器件具有布置在半导体衬底上的半导体区域中的高压MOSFET。 半导体集成电路器件包括:第一高电压MOSFET HN1; 具有连接到第一高压MOSFET的源极端子的源极端子和与第一高压MOSFET的栅极端子连接的栅极端子的第二高压MOSFET HN2; 和第一浮栅电压控制电路FGC。 第一浮栅电压控制电路FGC作为电源电压工作在5V或更低的电压,并且当接通第一高压MOSFET和第二高压MOSFET时,第一浮栅电压控制电路FGC 将第一高压MOSFET的源极端子中的电压设置为基准电压,将与电源电压对应的浮动电压与基准电压相加,并将相加的电压提供给第一高电压的栅极端子 MOSFET和第二高压MOSFET。 接地电压被提供给半导体衬底的相对表面。

    TRANSMISSION DRIVE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    4.
    发明申请
    TRANSMISSION DRIVE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    传输驱动电路和半导体集成电路器件

    公开(公告)号:US20160036418A1

    公开(公告)日:2016-02-04

    申请号:US14811835

    申请日:2015-07-29

    Applicant: HITACHI, LTD.

    CPC classification number: H03K3/013 B06B1/0207 B06B1/0622 H03K4/06 H03K17/687

    Abstract: Provided is a transmission drive circuit which can reduce distortions of a transmission signal and transmission noise, and is isolable from a signal line. A transmission drive circuit 700 includes a drive transistor 10 and an isolation diode 31 connected between a node n1 coupled to a signal line SL commonly used to propagate a transmission signal and a reception signal and a power source line HVP, and further includes an isolation diode 32 and a drive transistor 20 connected between the node n1 and a voltage line HVM. Furthermore, the transmission drive circuit 700 includes a switch 41 connected between a node n2 between the drive transistor 10 and the isolation diode 31, and a node n4 of a ground voltage Vs, and a switch 43 connected between a node n3 between the drive transistor 20 and the isolation diode 32, and a node n4. When the transmission signal is propagated through the signal line SL, the switches 41 and 43 are turned off by the clamp switch control circuit 200 such that bias current flows through the drive transistor 10, the isolation diode 31, the isolation diode 32 and the drive transistor 20.

    Abstract translation: 提供了可以减少发送信号的失真和发送噪声的发送驱动电路,并且可以与信号线隔离。 传输驱动电路700包括连接在通常用于传播发送信号的信号线SL的节点n1和接收信号和电源线HVP之间的驱动晶体管10和隔离二极管31,还包括隔离二极管 32和连接在节点n1和电压线HVM之间的驱动晶体管20。 此外,发送驱动电路700包括连接在驱动晶体管10和隔离二极管31之间的节点n2和接地电压Vs的节点n4之间的开关41,以及连接在驱动晶体管10之间的节点n3之间的开关43 20和隔离二极管32,以及节点n4。 当传输信号通过信号线SL传播时,开关41和43被钳位开关控制电路200截止,使得偏置电流流过驱动晶体管10,隔离二极管31,隔离二极管32和驱动器 晶体管20。

Patent Agency Ranking