Abstract:
Provided is a switching circuit capable of transmitting a signal with large amplitude and large current while suppressing deterioration when a small-amplitude signal is transmitted. The switching circuit 100 includes a first terminal a, a second terminal b, a first switch 1, a second switch 2, a first separation switch 3a, and a second separation switch 3b. The first switch 1 connects the first terminal a and the second terminal b according to a control signal. The second switch 2 has a first node n1 and a second node n2, and connects between the nodes in synchronization with the first switch 1. The first separation switch 3a transmits a signal of the first node n1 to the second node n2 when an electric potential of the first node n1 is higher than that of the second node n2 by more than a predetermined electric potential. The second separation switch 3b transmits a signal of the first node n1 to the second terminal b when an electric potential of the first node n1 is higher than an electric potential of the second node n2 by more than a predetermined electric potential.
Abstract:
Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage.The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC. The first floating gate voltage control circuit FGC operates at a voltage of 5 V or lower as a power-supply voltage, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit FGC sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET. A ground voltage is supplied to the opposed surface of the semiconductor substrate.
Abstract:
An electronic circuit includes a first level shift circuit, a second level shift circuit, an internal circuit, a high voltage circuit, first and second transistors, and first and second protective circuits. The first and second protective circuits perform control the first and second transistors so as to make them non-conductive when at least one of a plurality of types of power supply voltages becomes equal to or less than a predetermined value.
Abstract:
Provided is a transmission drive circuit which can reduce distortions of a transmission signal and transmission noise, and is isolable from a signal line. A transmission drive circuit 700 includes a drive transistor 10 and an isolation diode 31 connected between a node n1 coupled to a signal line SL commonly used to propagate a transmission signal and a reception signal and a power source line HVP, and further includes an isolation diode 32 and a drive transistor 20 connected between the node n1 and a voltage line HVM. Furthermore, the transmission drive circuit 700 includes a switch 41 connected between a node n2 between the drive transistor 10 and the isolation diode 31, and a node n4 of a ground voltage Vs, and a switch 43 connected between a node n3 between the drive transistor 20 and the isolation diode 32, and a node n4. When the transmission signal is propagated through the signal line SL, the switches 41 and 43 are turned off by the clamp switch control circuit 200 such that bias current flows through the drive transistor 10, the isolation diode 31, the isolation diode 32 and the drive transistor 20.