公开(公告)号：US3704384A

公开(公告)日：1972-11-28

申请号：US3704384D

申请日：1971-03-30

Applicant: IBM

Inventor： DESIMONE ROY R ,  LINTON RICHARD H

IPC: H01L21/00 ,  H01L21/822 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/00 ,  H01L29/78 ,  H01L11/14

CPC classification number: H01L21/00 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/00

Abstract: This specification discloses a polarized capacitor for use in monolithic structures, particularly those using field effect transistors. One plate of this capacitor is a metal layer overlying and insulated from a semiconductor body which has a diffusion in it adjacent to the overlying metal layer. The boundaries of this diffusion form a rectifying junction with the rest of the semiconductor body. When a voltage is applied between the metal layer and the diffusion an electric field is formed under the layer and adjacent to the diffusion so as to create an inversion layer which forms with the diffusion the second plate of the capacitor.

Abstract translation: 本说明书公开了一种用于单片结构的极化电容器，特别是使用场效应晶体管的电容器。 该电容器的一个板是与半导体本体重叠并绝缘的金属层，半导体本体在其邻近金属层附近具有扩散。 该扩散的边界与半导体本体的其余部分形成整流结。 当在金属层和扩散层之间施加电压时，在该层下方并且与扩散相邻形成电场，从而产生与电容器的第二板扩散形成的反型层。