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1.发明授权Method for etching an opening in an insulating layer without forming pinholes therein 失效在不形成PINHOLES的情况下在绝缘层中蚀刻开放的方法
公开(公告)号：US3518084A
公开(公告)日：1970-06-30
申请号：US3518084D
申请日：1967-01-09
Applicant: IBM
Inventor： BARSON FRED , KUEHN RICHARD T , PALMER MYRON D
IPC: H01L21/00 , H01L21/033 , H01L23/29 , H01L23/485 , G03C5/00 , G03C5/06
CPC classification number: H01L23/291 , H01L21/00 , H01L21/033 , H01L23/29 , H01L23/485 , H01L2924/0002 , H01L2924/00
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