Abstract:
AN RF SPUTTERING APPARATUS HAS AN ELONGATED HOLLOW CYLINDRICAL TARGET SURROUNDING AN ELONGATED CYLINDRICAL CATHODE TO SHIELD THE CATHODE FROM A PARTIALLY EVACUATED CHAMBER IN WHICH THE TARGET IS DISPOSED. AN ELONGATED HOLLOW CYLINDRICAL ANODE IS DISPOSED IN SURROUNDING RELATION TO THE TARGET. THE TARGET IS SPACED FROM THE CATHODE SO THAT COOLING OF THE TARGET MAY OCCUR BY DIELECTRIC COOLANT FLOWING THEREBETWEEN WITH THE DIELECTRIC COOLANT ALSO TRANSFERRING RF POWER TO THE TARGET FROM THE CATHODE WHEN RF POWER IS APPLIED BETWEEN THE CATHODE AND THE ANODE. IN AN EXTENSION TO CONTINUOUS MODE DEPOSITION (AS OPPOSED TO BATCH MODE DEPOSITION), SUBSTRATES CAN HAVE VARYING THICKNESSES OF MATERIAL DEPOSITED THEREON FROM THE TARGET UNDER THE SAME SPUTTERING CONDITIONS BY MOVING EACH SUBSTRATE INTO THE CHAMBER FOR SUPPORT ON THE INNER SURFACE OF THE ANODE, ROTATING THE ANODE ABOUT THE TARGET AT A CONSTANT VELOCITY, AND THEN REMOVING EACH SUBSTRATE AFTER A PERIOD OF TIME. THE AMOUNT OF TIME THAT EACH OF THE SUBSTRATES IS SUPPORTED ON THE ANODE DETERMINES THE THICKNESS OF THE DEPOSITED MATERIAL ON THE SUBSTRATE.