Article-handling apparatus
    1.
    发明授权

    公开(公告)号:US3625384A

    公开(公告)日:1971-12-07

    申请号:US3625384D

    申请日:1968-09-26

    Applicant: IBM

    CPC classification number: H01L21/6835 B65G59/062

    Abstract: Articles are transported from one position to another by being disposed in trays, which are carried within a portable magazine. The trays are automatically unloaded in sequence from the magazine and transported to a position in which the articles in the tray may be removed therefrom. The unloaded tray is then returned to the magazine and the next of the trays is removed from the magazine. The apparatus includes coding means on the magazine to indicate the status of the articles within each of the trays in the magazine.

    Continuous vacuum process apparatus
    3.
    发明授权
    Continuous vacuum process apparatus 失效
    连续真空过程设备

    公开(公告)号:US3652444A

    公开(公告)日:1972-03-28

    申请号:US3652444D

    申请日:1969-10-24

    Applicant: IBM

    CPC classification number: B01J3/006 C23C14/568 Y10S414/139

    Abstract: The invention is directed to a continuous vacuum multiprocessing system for treating, evaporation, or sputter vacuum depositing on a substrate or wafer for the preparation of semiconductors. The utilized structure comprises an annular chamber partitioned into alternating process and isolation compartments which are circularly arranged around a common (central) vacuum manifold. A circular transport ring, confined to the evacuated annular mechanically transports (via rotation) the substrates through the various serially connected compartments.

    Abstract translation: 本发明涉及用于处理,蒸发或溅射真空沉积在用于制备半导体的衬底或晶片上的真空多处理系统。 所使用的结构包括分隔成交替的过​​程和隔离隔室的环形室,其围绕公共(中心)真空歧管圆形布置。 限制在抽空环形中的圆形运输环通过各种串联连接的隔室机械地运输(通过旋转)基板。

    Elongated electrode and target arrangement for an re sputtering apparatus and method of sputtering
    4.
    发明授权
    Elongated electrode and target arrangement for an re sputtering apparatus and method of sputtering 失效
    用于重新喷溅装置的伸长电极和目标装置和溅射方法

    公开(公告)号:US3707452A

    公开(公告)日:1972-12-26

    申请号:US3707452D

    申请日:1970-01-22

    Applicant: IBM

    CPC classification number: B65H18/021 C23C14/3478 H01J37/34

    Abstract: AN RF SPUTTERING APPARATUS HAS AN ELONGATED HOLLOW CYLINDRICAL TARGET SURROUNDING AN ELONGATED CYLINDRICAL CATHODE TO SHIELD THE CATHODE FROM A PARTIALLY EVACUATED CHAMBER IN WHICH THE TARGET IS DISPOSED. AN ELONGATED HOLLOW CYLINDRICAL ANODE IS DISPOSED IN SURROUNDING RELATION TO THE TARGET. THE TARGET IS SPACED FROM THE CATHODE SO THAT COOLING OF THE TARGET MAY OCCUR BY DIELECTRIC COOLANT FLOWING THEREBETWEEN WITH THE DIELECTRIC COOLANT ALSO TRANSFERRING RF POWER TO THE TARGET FROM THE CATHODE WHEN RF POWER IS APPLIED BETWEEN THE CATHODE AND THE ANODE. IN AN EXTENSION TO CONTINUOUS MODE DEPOSITION (AS OPPOSED TO BATCH MODE DEPOSITION), SUBSTRATES CAN HAVE VARYING THICKNESSES OF MATERIAL DEPOSITED THEREON FROM THE TARGET UNDER THE SAME SPUTTERING CONDITIONS BY MOVING EACH SUBSTRATE INTO THE CHAMBER FOR SUPPORT ON THE INNER SURFACE OF THE ANODE, ROTATING THE ANODE ABOUT THE TARGET AT A CONSTANT VELOCITY, AND THEN REMOVING EACH SUBSTRATE AFTER A PERIOD OF TIME. THE AMOUNT OF TIME THAT EACH OF THE SUBSTRATES IS SUPPORTED ON THE ANODE DETERMINES THE THICKNESS OF THE DEPOSITED MATERIAL ON THE SUBSTRATE.

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