公开(公告)号：US3652444A

公开(公告)日：1972-03-28

申请号：US3652444D

申请日：1969-10-24

Applicant: IBM

Inventor： LESTER WILLIAM C ,  NUCCIO CARLO ,  WARD ERNEST S

IPC: B23Q3/08 ,  B01J3/00 ,  B01J3/02 ,  C23C14/56 ,  H01L21/677 ,  C23C15/00

CPC classification number: B01J3/006 ,  C23C14/568 ,  Y10S414/139

Abstract: The invention is directed to a continuous vacuum multiprocessing system for treating, evaporation, or sputter vacuum depositing on a substrate or wafer for the preparation of semiconductors. The utilized structure comprises an annular chamber partitioned into alternating process and isolation compartments which are circularly arranged around a common (central) vacuum manifold. A circular transport ring, confined to the evacuated annular mechanically transports (via rotation) the substrates through the various serially connected compartments.

Abstract translation: 本发明涉及用于处理，蒸发或溅射真空沉积在用于制备半导体的衬底或晶片上的真空多处理系统。 所使用的结构包括分隔成交替的过​​程和隔离隔室的环形室，其围绕公共（中心）真空歧管圆形布置。 限制在抽空环形中的圆形运输环通过各种串联连接的隔室机械地运输（通过旋转）基板。

公开(公告)号：US3612692A

公开(公告)日：1971-10-12

申请号：US3612692D

申请日：1968-11-21

Applicant: IBM

Inventor： KRUPPA ROBERT W ,  WARD ERNEST S

IPC: G01B11/06 ,  G05D5/03 ,  G01B9/02

CPC classification number: G05D5/03 ,  G01B11/0675

Abstract: An automatic thickness monitoring and control system and method for monitoring the growth of a dielectric film on a reflective substrate such as a silicon wafer during an RF sputtering deposition process and for stopping the deposition process when the film reaches a predetermined thickness. The successive minima (or maxima) in the interference pattern of light reflected from the wafer are counted to determine the film thickness and the sputtering is stopped at a predetermined count. In another embodiment, sputtering is stopped by interpolation between counts.

公开(公告)号：US3707452A

公开(公告)日：1972-12-26

申请号：US3707452D

申请日：1970-01-22

Applicant: IBM

Inventor： LESTER WILLIAM CARL ,  NUCCIO CARLO ,  WARD ERNEST S

IPC: H05B7/00 ,  B65H18/02 ,  C23C14/34 ,  C23C14/40 ,  H01J37/34 ,  C23C15/00

CPC classification number: B65H18/021 ,  C23C14/3478 ,  H01J37/34

Abstract: AN RF SPUTTERING APPARATUS HAS AN ELONGATED HOLLOW CYLINDRICAL TARGET SURROUNDING AN ELONGATED CYLINDRICAL CATHODE TO SHIELD THE CATHODE FROM A PARTIALLY EVACUATED CHAMBER IN WHICH THE TARGET IS DISPOSED. AN ELONGATED HOLLOW CYLINDRICAL ANODE IS DISPOSED IN SURROUNDING RELATION TO THE TARGET. THE TARGET IS SPACED FROM THE CATHODE SO THAT COOLING OF THE TARGET MAY OCCUR BY DIELECTRIC COOLANT FLOWING THEREBETWEEN WITH THE DIELECTRIC COOLANT ALSO TRANSFERRING RF POWER TO THE TARGET FROM THE CATHODE WHEN RF POWER IS APPLIED BETWEEN THE CATHODE AND THE ANODE. IN AN EXTENSION TO CONTINUOUS MODE DEPOSITION (AS OPPOSED TO BATCH MODE DEPOSITION), SUBSTRATES CAN HAVE VARYING THICKNESSES OF MATERIAL DEPOSITED THEREON FROM THE TARGET UNDER THE SAME SPUTTERING CONDITIONS BY MOVING EACH SUBSTRATE INTO THE CHAMBER FOR SUPPORT ON THE INNER SURFACE OF THE ANODE, ROTATING THE ANODE ABOUT THE TARGET AT A CONSTANT VELOCITY, AND THEN REMOVING EACH SUBSTRATE AFTER A PERIOD OF TIME. THE AMOUNT OF TIME THAT EACH OF THE SUBSTRATES IS SUPPORTED ON THE ANODE DETERMINES THE THICKNESS OF THE DEPOSITED MATERIAL ON THE SUBSTRATE.

公开(公告)号：US3630881A

公开(公告)日：1971-12-28

申请号：US3630881D

申请日：1970-01-22

Applicant: IBM

Inventor： LESTER WILLIAM C ,  NUCCIO CARLO ,  WARD ERNEST S

IPC: C23C14/40 ,  B05B5/00 ,  B41J2/005 ,  C23C14/35 ,  H01J37/34 ,  C23C15/00

CPC classification number: C23C14/35 ,  B05B5/00 ,  B05B5/001 ,  B41J2/005 ,  H01J37/34

Abstract: A TARGET OF A DIELECTRIC MATERIAL IS MOUNTED IN SPACED RELATION TO A CATHODE, WHICH IS ISOLATED FROM THE SPUTTERING CHAMBER AND THE ANODE IN THE SPUTTERING CHAMBER BY THE TARGET AND ITS MOUNTING STRUCTURE. RF ENERGY IS TRANSFERRED FROM THE CATHODE TO THE TARGET, WHICH HAS AT LEAST A PORTION PARALLEL TO THE ANODE, THROUGH THE SPACE BY A DIELECTRIC COOLANT, A LIQUID METAL, OR A METALLIC PASTE. WHEN EITHER THE METALLIC PASTE OR THE LIQUID METAL IS EMPLOYED, THE CATHODE IS COOLED BY CIRCULTING A COOLANT SUCH AS WATER THERETHROUGH.