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    Electron beam enhanced large area deposition system
    2.
    发明申请
    Electron beam enhanced large area deposition system 审中-公开
    电子束增强大面积沉积系统

    公开(公告)号：US20050040037A1

    公开(公告)日：2005-02-24

    申请号：US10644567

    申请日：2003-08-20

    申请人： Scott Walton ,  Darrin Leonhardt ,  Robert Meger ,  Richard Fernsler ,  Christorpher Muratore

    发明人： Scott Walton ,  Darrin Leonhardt ,  Robert Meger ,  Richard Fernsler ,  Christorpher Muratore

    IPC分类号： C23C14/32 ,  C23C14/34 ,  H01L20060101

    CPC分类号： C23C14/3478

    摘要： This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.

    摘要翻译： 本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。 等离子体可用作溅射应用中的离子源，其中离子用于从目标表面释放材料，然后可将其冷凝在基底上以形成膜或涂层。 或者，等离子体可以与现有的沉积源组合，包括基于溅射或蒸发技术的沉积源。 在任一种配置中，等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。 电子束大面积沉积系统（EBELADS）是生产直到并包括几平方米的薄膜或涂层的新方法。

    Methods of sputter deposition of materials
    3.
    发明授权
    Methods of sputter deposition of materials 失效
    溅射沉积材料的方法

    公开(公告)号：US3869368A

    公开(公告)日：1975-03-04

    申请号：US16091371

    申请日：1971-07-08

    申请人： SMITHS INDUSTRIES LTD

    发明人： BEARDMORE GEOFFREY ,  EVANS HUGH N

    IPC分类号： C23C14/02 ,  C23C14/34 ,  C23C14/35 ,  F16C33/10 ,  H01J37/34 ,  C23C15/00

    CPC分类号： H01J37/34 ,  C23C14/022 ,  C23C14/3478 ,  C23C14/355 ,  F16C17/045 ,  F16C33/1015

    摘要： Spirally-grooved and plain thrust-plates of an aerodynamic gaslubricated bearing are both manufactured by sputter-deposition of a layer of wear-resistant target-material on to flat-disc substrates. Initial sputtering removes material from the substrates and replaces it partially with an alloy of target- and substrate-materials, the sputtering from the substrates being reduced progressively to zero as sputtering from the target is increased progressively to a full value. The content of targetmaterial increases progressively through the alloy-layer up to the final upper layer of target-material alone.

    摘要翻译： 空气动力气体润滑轴承的螺旋槽和普通推力板均通过将一层耐磨的靶材料溅射沉积到平盘基板上而制造。 初始溅射从衬底中去除材料并且用靶材料和衬底材料的合金部分地代替它，当从靶的溅射逐渐增加到全部值时，来自衬底的溅射逐渐减小到零。 目标材料的含量逐渐增加通过合金层直到单独的靶材料的最终上层。

    Vacuum system with separable work piece support
    7.
    发明申请
    Vacuum system with separable work piece support 有权
    具有可分离工件支撑的真空系统

    公开(公告)号：US20020053322A1

    公开(公告)日：2002-05-09

    申请号：US09947454

    申请日：2001-09-05

    发明人： Roger Seeli ,  Mauro Pedrazzini ,  Volker Derflinger

    IPC分类号： C23C016/00

    CPC分类号： H01J37/32055 ,  C23C14/325 ,  C23C14/3478 ,  C23C14/505 ,  H01J37/32752

    摘要： A vacuum system for the treatment of work pieces has an evacuatable treatment chamber having a centrally disposed low voltage arc discharge arrangement and laterally disposed loading opening. A coupling device between the work piece support and a receiving device on the system side allows simplified loading and removal of the work pieces to be treated along with the support by simply lifting onto or lowering from the receiving device.

    摘要翻译： 用于处理工件的真空系统具有可排气的处理室，其具有居中设置的低压电弧排放装置和横向设置的装载开口。 工件支撑件和系统侧的接收装置之间的联接装置允许通过简单地提升到接收装置或从接收装置降低来简化装载和移除待处理的工件以及支撑件。

    Apparatus and process for producing a thin layer on a substrate
    8.
    发明授权
    Apparatus and process for producing a thin layer on a substrate 失效
    在基板上生产薄层的装置和方法

    公开(公告)号：US5110435A

    公开(公告)日：1992-05-05

    申请号：US585083

    申请日：1990-09-21

    申请人： Helmut Haberland

    发明人： Helmut Haberland

    IPC分类号： C23C14/46 ,  C23C14/22 ,  C23C14/34

    CPC分类号： C23C14/345 ,  C23C14/221 ,  C23C14/228 ,  C23C14/3478

    摘要： Ionized cluster beam (ICB) deposition has received considerable attention since its introduction in 1972 by Takagi et al, at Kyoto University because of its potential for low temperature film growth. While further investigation of many aspects of ICB deposition is warranted, it is first necessary to determine with some certainty whether large clusters are being produced. A complete analysis of the Eaton ICB source involving computer calculation of the potential fields and computer simulation of the electrons and ions as they react to and influence these fields provides an in-depth understanding of the dynamics that influence the final ion beam characteristics. A high resolution time-of-flight mass spectrometer was developed to experimentally investigate the cluster size distribution. No evidence of large clusters was found down to a level more than two orders of magnitude below what the Kyoto University group has reported. A computer analysis of the three Kyoto University cluster size experiments that form the foundation of ICB has shown that the potential fields in the ionization areas are critically distorted by either space-charge effects or design flaws, both of which are serious enough to invalidate the experiments. The theory behind large cluster production and the body of indirect evidence attributed to the presence of large clusters are not convincing by themselves so it is concluded that a Takagi-type source does not produce large clusters in quantities capable of affecting film growth.

    摘要翻译： PCT No.PCT / DE89 / 00179 Sec。 371 1990年9月21日第 102（e）1990年9月21日PCT PCT 1989年3月22日提交PCT。 公开号WO89 / 09293 日期：1989年10月5日。自从它在京都大学Takagi等人于1972年引进以来，离子束聚集（ICB）沉积受到了相当的关注，因为它具有低温膜生长的潜力。 虽然有必要进一步调查ICB沉积的许多方面，但首先需要确定是否正在生产大型集群。 伊顿ICB源的完整分析涉及电子计算领域的计算机计算，电子和离子的计算机模拟反应和影响这些领域，可以深入了解影响最终离子束特性的动力学。 开发了高分辨率飞行时间质谱仪，以实验研究簇大小分布。 没有发现大型集群的证据低于京都大学集团报告的两个数量级以上。 构成ICB基础的三个京都大学集群规模实验的计算机分析表明，电离区域的潜在领域被空间电荷效应或设计缺陷严重扭曲，两者都严重到足以使实验无效 。 大集群生产背后的理论以及归因于大集群存在的间接证据的身体本身并不令人信服，因此得出结论，高木型源不会产生能影响膜生长的数量的大簇。

    Cathode sputtering apparatus
    9.
    发明授权
    Cathode sputtering apparatus 失效
    阴极溅射装置

    公开(公告)号：US4308126A

    公开(公告)日：1981-12-29

    申请号：US188399

    申请日：1980-09-18

    申请人： Robert J. Wright

    发明人： Robert J. Wright

    IPC分类号： C23C14/34 ,  C23C14/50 ,  C23C15/00

    CPC分类号： C23C14/3478 ,  C23C14/505

    摘要： Cathode sputtering apparatus for coating articles which are rotated within a vacuum sputtering chamber and which are electrically biased includes a shaft for supporting the articles to be coated, wherein the shaft is supported by a plurality of non-lubricated bearings disposed within the vacuum chamber, at least one of the bearings being designed to conduct electricity to the shaft, that bearing being a thrust bearing supported by and in electrical contact with a bearing support plate and having races and rolling elements preferably made from either molybdenum or tungsten which are very hard materials with low electrical resistivity.

    摘要翻译： 用于涂覆在真空溅射室内旋转并且被电偏置的物品的阴极溅射装置包括用于支撑待涂覆物品的轴，其中轴由设置在真空室内的多个非润滑轴承支撑在 至少一个轴承被设计成向轴传导电力，该轴承是由轴承支撑板支承并与之电接触的推力轴承，并且具有优选地由钼或钨制成的轨道和滚动元件，这些是非常硬的材料， 电阻率低。

    Anode assisted sputter etch and deposition apparatus
    10.
    发明授权
    Anode assisted sputter etch and deposition apparatus 失效
    阳极辅助溅射蚀刻和沉积设备

    公开(公告)号：US4201654A

    公开(公告)日：1980-05-06

    申请号：US949167

    申请日：1978-10-06

    申请人： B. Wayne Castleman

    发明人： B. Wayne Castleman

    IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C15/00

    CPC分类号： H01J37/3438 ,  C23C14/3478 ,  H01J37/34

    摘要： An anode assisted sputter etch and deposition apparatus having an electron source, a first anode adjacent the electron source and a second anode adjacent a negatively charged article to be sputter etched or sputter target in an ionizable gas atmosphere. Upon production of the electrons from said electron source a plasma is formed between the electron source, the first anode and the second anode, the plasma adjacent the second anode being capable of desorbing gases and other absorbed vapors from the surface of the article or target while positive ions from the plasma bombard the article or target with sufficient energy to eject material from the surface thereof.

    摘要翻译： 具有电子源的阳极辅助溅射蚀刻和沉积设备，邻近电子源的第一阳极和邻近待溅射蚀刻的带负电荷物品的第二阳极或在可电离气体气氛中溅射靶。 当从所述电子源产生电子时，在电子源，第一阳极和第二阳极之间形成等离子体，邻近第二阳极的等离子体能够从制品或靶的表面解吸气体和其它吸收的蒸气，同时 来自等离子体的正离子以足够的能量轰击物品或靶，以从其表面喷射材料。