公开(公告)号：US3649501A

公开(公告)日：1972-03-14

申请号：US3649501D

申请日：1970-06-18

Applicant: IBM

Inventor： SADAGOPAN VARADACHARI

IPC: C23C14/35 ,  C23C15/00

CPC classification number: C23C14/35

Abstract: A METHOD OF RADIO FREQUENCY SPUTTERING LITHIUM NIOBATE THIN, SINGLE CRYSTAL FILMS HAVING BULK PROPERTIES IS DISCLOSED. THE SPUTTERING PROCESS IS PREFERABLY CARRIED OUT AT SUBSTRATE TEMPERATURES IN A RANGE OF 450*C. TO 870*C. THE SUBSTRATE IS PREFERABLY SINGLE CRYSTAL C OR A-A-AL2O3 OR MAY BE A SINGLE CRYSTAL OF GROWN LITHIUM NIOBATE. RADIO FREQUENCY POWERS IN THE RANGE OF 25 TO 150 WATTS FOR A FOUR-INCH DIAMETER CATHODE AND DEPOSITION RATES OF LESS THAN 0.4 A. PER SECOND MAY BE UTILIZED. ARGON PRESSURES DURING SPUTTERING ARE IN THE RANGE OF 25 MICRONS TO 44 MICRONS. THIN, SINGLE CRYSTAL FILMS UP TO 10,000 A. IN THICKNESS HAVE BEEN PRODUCED UTILIZING THE ABOVE SPUTTERING TECHNIQUE. THE RESULTING FILMS HAVE PROPERTIES SIMILAR TO CRYSTALS GROWN IN BULK.

公开(公告)号：US3887451A

公开(公告)日：1975-06-03

申请号：US31958972

申请日：1972-12-29

Applicant: IBM

Inventor： CUOMO JEROME J ,  MAYADAS ASHOK F ,  ROSENBERG ROBERT ,  SADAGOPAN VARADACHARI

IPC: C23C14/35 ,  C23C15/00

CPC classification number: C23C14/35

Abstract: A method is disclosed for sputtering epitaxially a layer of stoichiometric garnet composition from a single target wherein the target is composed of a mixture of the separate components of the sputtered layer. Illustratively, both at a substrate temperature of approximately 450*C and at another substrate temperature between 800-850*C, there was obtained formation of a film of gallium substituted yttrium iron garnet (Ga:YIG). A target was made up of the desired stoichiometry with a mixture of the individual oxides pressed to 85% of the compound''s theoretical density. Generally, the steps of the method are: (1) applying a radiofrequency bias to the substrate during sputtering to prevent the deposition of an easily resputtered component of the target; and (2) changing the power density to the target during deposition. Specifically, a target was made up of a mixture of individual oxides Y2O3 + Ga2O3 + Fe2O3 which was pressed to 85% of its theoretical density. Exemplary films of stoichiometric composition were obtained with a radio-frequency bias on the substrate in the range approximately from ground to 100 volts and with power density to the target in the range of approximately 5 to 65 watts/in2. The stoichiometric ratio for the composition was Y3Fe(5 x)GaxO12, where 0

Abstract translation: 公开了一种用于从单一靶外溅射一层化学计量的石榴石组合物的方法，其中靶由溅射层的分离组分的混合物组成。

公开(公告)号：US3661436A

公开(公告)日：1972-05-09

申请号：US3661436D

申请日：1970-06-30

Applicant: IBM

Inventor： HORWATH RONALD S ,  SADAGOPAN VARADACHARI

IPC: G03F1/54 ,  G02B5/20

CPC classification number: G03F1/54 ,  Y10S438/943 ,  Y10S438/945

Abstract: A mask for the manufacture of semiconductor and other very small components. The mask is comprised of patterns of multi-component oxides and fluorides, such as spinels, perovskites, and garnets. In general, the materials are harder than the components being manufactured and are opaque to the wavelength used in photoresist techniques, while being transparent to the visible wavelengths. Materials with an energy gap between approximately 2.8 eV and 5 eV satisfy these optical properties, a particular example being GaFeO3. These masks are not damaged by surface defects on the components and can be visually aligned.

Abstract translation: 用于制造半导体和其他非常小的部件的掩模。 掩模由多组分氧化物和氟化物的图案组成，例如尖晶石，钙钛矿和石榴石。 通常，材料比制造的组件更硬，并且对于光致抗蚀剂技术中使用的波长是不透明的，同时对可见波长是透明的。 具有约2.8eV至5eV之间的能隙的材料满足这些光学性质，具体示例为GaFeO 3。 这些掩模不会被部件上的表面缺陷损坏，并且可以在视觉上对准。

公开(公告)号：US3696312A

公开(公告)日：1972-10-03

申请号：US3696312D

申请日：1970-06-30

Applicant: IBM

Inventor： KUHN LAWRENCE ,  SADAGOPAN VARADACHARI ,  TSUI ROBERT T

IPC: H01P1/215 ,  H03H9/38 ,  H03H9/22 ,  H03H9/30

CPC classification number: H01P1/215 ,  H03H9/38

Abstract: Electric field controllable devices which operate on the principle of velocity change of a wave passing therethrough. These waves can be magneto-elastic or spin waves, including surface waves. The materials used in these devices include Ga2 xFexO3, Cr2O3, and YIG. When the electric field across the device is changed, the cyclotron resonance frequency of the device is greatly shifted, resulting in wave velocity changes up to about 50 percent. A bias magnetic field is generally applied across the devices to establish a resonance frequency. Devices include variable delays, modulators, frequency translators, wave guides, tunable filters, etc.

Abstract translation: 电场可控设备，其工作原理是通过其中的波速度变化。 这些波可以是磁弹性或自旋波，包括表面波。 这些器件中使用的材料包括Ga2-xFexO3，Cr2O3和YIG。 当器件的电场发生变化时，器件的回旋加速器谐振频率会大大偏移，导致波速变化达到50％左右。 通常在器件上施加偏置磁场以建立谐振频率。 设备包括可变延迟，调制器，频率转换器，波导，可调谐滤波器等

公开(公告)号：US3648081A

公开(公告)日：1972-03-07

申请号：US3648081D

申请日：1970-06-30

Applicant: IBM

Inventor： LEAN ERIC G ,  SADAGOPAN VARADACHARI ,  TSENG SAMUEL C-C

IPC: G11C21/02 ,  H03H9/42 ,  H03K5/15 ,  H01V7/00

CPC classification number: G11C21/023 ,  H03H9/423 ,  H03K5/15046

Abstract: An integrated acoustic surface wave device is provided by this disclosure wherein a piezoelectric field associated with an acoustic surface wave causes a material adjacent to the surface to transform from one physical state to another physical state. The changes in state due to the presence of the piezoelectric wave are utilized to detect, amplify and store information. The presence of the piezoelectric wave controls external physical quantities, e.g., voltage and current, for information processing and storage. In particular, an amorphous semiconducting material is deposited on the surface of a piezoelectric surface wave acoustic delay line at a location where the presence of the traversing piezoelectric wave is to be detected. Contact electrodes are provided on the amorphous material and are connected to an external electrical circuit wherein there is a voltage source and a load means. The voltage source provides an electric field in the amorphous material of a value below that necessary to achieve the threshold value for switching the material from a high-voltage and low-current state to a highcurrent and low-voltage state. In this manner, the piezoelectric field of the acoustic surface wave which transiently appears at the amorphous material when added to the externally applied electric field causes it to switch states and thereby gives rise to a pulse indication in the external electrical circuit. Accordingly, an integrated apparatus in accordance with this disclosure includes a piezoelectric surface wave delay line and an amorphous semiconductor film. A transducer on the surface of the piezoelectric crystal generates piezoelectric surface waves therein, and a local receiving transducer which serves as the electrodes for the amorphous semiconductor film intercepts the piezoelectric surface wave. The electric field associated with the surface wave supplements a bias electric field at the amorphous semiconductor film and causes the states thereof to switch and provides an indication of the presence of the piezoelectric wave in the external electric circuit connected to the amorphous film.

Abstract translation: 通过本公开提供了一种集成的声表面波装置，其中与声表面波相关联的压电场使得与表面相邻的材料从一个物理状态转变到另一个物理状态。 由于存在压电波而导致的状态变化被用于检测，放大和存储信息。 压电波的存在控制用于信息处理和存储的外部物理量，例如电压和电流。 特别地，非晶半导体材料沉积在压电表面波声延迟线的表面上，在要检测的横向压电波的存在的位置处。 接触电极设置在非晶材料上并且连接到外部电路，其中存在电压源和负载装置。 电压源在非晶材料中提供的电场值低于实现将材料从高电压和低电流状态切换到高电流和低电压状态的阈值所需的电压值。 以这种方式，当加到外部施加的电场时，在非晶材料瞬时出现的声表面波的压电场导致其转换状态，从而在外部电路中产生脉冲指示。