公开(公告)号：US3285836A

公开(公告)日：1966-11-15

申请号：US29134763

申请日：1963-06-28

Applicant: IBM

Inventor： MAISSEL LEON I ,  STANDLEY CHARLES L

IPC: C25D11/02 ,  C25D11/26 ,  H01L21/00 ,  H01L23/29

CPC classification number: H01L21/00 ,  C25D11/26 ,  H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3365378A

公开(公告)日：1968-01-23

申请号：US33485663

申请日：1963-12-31

Applicant: IBM

Inventor： MAISSEL LEON I ,  STANDLEY CHARLES L

IPC: H01G4/06

CPC classification number: H01G4/06

公开(公告)号：US3617463A

公开(公告)日：1971-11-02

申请号：US3617463D

申请日：1969-06-18

Applicant: IBM

Inventor： GREGOR LAWRENCE V ,  MAISSEL LEON I ,  STANDLEY CHARLES L

IPC: C23F4/00 ,  H01J37/30 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H05K3/08 ,  C23C15/00

CPC classification number: H01J37/34

Abstract: The object to be sputter etched is excited in a reduced atmosphere of inert gas by the application of an RF potential across a pair of electrodes, one of which supports the object and is capacitively coupled to the RF source. The improvement is a means to catch and retain material removed by the sputtering operation.