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公开(公告)号：US20160134847A1
公开(公告)日：2016-05-12
申请号：US14918339
申请日：2015-10-20
Applicant: IMEC VZW
Inventor： Paul Goetschalckx , Bruno Jozef Arthur Mollekens
IPC: H04N9/04 , H04N5/378 , H04N5/357 , H04N9/64 , H04N5/3745
Abstract: An image sensor for converting incident light into digital signals is disclosed. In one aspect, the image sensor includes a matrix of light-sensitive pixels arranged in a plurality of pixel columns each having a predetermined lateral extent. The image sensor includes an analog-to-digital converter block including a plurality of analog-to-digital converters (ADCs). Each of the plurality of ADCs includes an analog processing portion adapted to receive at least one analog signal from a pixel column of the matrix and to generate at least one digital signal from the received analog signal. Each of the plurality of ADCs includes a digital processing portion adapted to receive said at least one digital signal from said corresponding analog processing portion. The lateral extent of at least one of the digital processing portions is greater than the lateral extent of its corresponding analog processing portion.
Abstract translation: 公开了一种用于将入射光转换为数字信号的图像传感器。 在一个方面，图像传感器包括布置在多个像素列中的每个具有预定横向范围的感光像素矩阵。 图像传感器包括包括多个模数转换器（ADC）的模数转换器模块。 多个ADC中的每一个包括模拟处理部分，适于从矩阵的像素列接收至少一个模拟信号，并从接收到的模拟信号生成至少一个数字信号。 多个ADC中的每一个包括适于从所述对应的模拟处理部分接收所述至少一个数字信号的数字处理部分。 数字处理部分中的至少一个的横向范围大于其对应的模拟处理部分的横向范围。
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公开(公告)号：US10742916B2
公开(公告)日：2020-08-11
申请号：US16094165
申请日：2017-04-06
Applicant: IMEC VZW
Inventor： Jonathan Borremans , Nicolaas Tack , Maarten Rosmeulen , Paul Goetschalckx , Piet De Moor
Abstract: An imaging sensor is disclosed, comprising: a set of at least two charge-coupled device, CCD, sub-arrays, wherein each sub-array comprises pixels arranged in columns and rows, and each pixel being arranged to accumulate an electric charge proportional to an intensity of light incident on the pixel; a time delay and integration, TDI, clocking circuitry for controlling and timing transfer of accumulated electric charges between rows of pixels in a column direction in order to integrate the accumulated electric charges in each column of pixels; wherein each CCD sub-array further comprises a readout row for converting the integrated electric charge of each column of pixels into voltage or current, wherein the readout row comprises transistors enabling readout of the signal by the readout block; and a readout block which is arranged to receive input from selected readout rows and convert the input into digital domain or convert the input to a combined representation of pixel values based on the set of CCD sub-arrays.
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公开(公告)号：US10015454B2
公开(公告)日：2018-07-03
申请号：US14918339
申请日：2015-10-20
Applicant: IMEC VZW
Inventor： Paul Goetschalckx , Bruno Jozef Arthur Mollekens
Abstract: An image sensor for converting incident light into digital signals is disclosed. In one aspect, the image sensor includes a matrix of light-sensitive pixels arranged in a plurality of pixel columns each having a predetermined lateral extent. The image sensor includes an analog-to-digital converter block including a plurality of analog-to-digital converters (ADCs). Each of the plurality of ADCs includes an analog processing portion adapted to receive at least one analog signal from a pixel column of the matrix and to generate at least one digital signal from the received analog signal. Each of the plurality of ADCs includes a digital processing portion adapted to receive said at least one digital signal from said corresponding analog processing portion. The lateral extent of at least one of the digital processing portions is greater than the lateral extent of its corresponding analog processing portion.
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