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公开(公告)号：US20150028281A1
公开(公告)日：2015-01-29
申请号：US13952678
申请日：2013-07-29
Applicant: Industrial Technology Research Institute
Inventor： Frederick T. Chen , Pei-Yi Gu
IPC: H01L45/00
CPC classification number: H01L45/1253 , H01L27/2409 , H01L27/249 , H01L45/08 , H01L45/1226 , H01L45/1266 , H01L45/145 , H01L45/146
Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
Abstract translation: 提供了包括至少一个反应层，至少一个电极和至少一个电阻变化材料的电阻式存储器结构。 反应层沿第一方向和第二方向延伸。 电极至少沿着第三方向延伸，其中第一方向，第二方向和第三方向彼此不同。 电阻变化材料的至少一部分设置在反应层和电极之间。 当离子从电阻变化材料扩散到反应层或从反应层扩散到电阻变化材料时，电阻变化材料的电阻变化。
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2.发明申请VIA STRUCTURE, MEMORY ARRAY STRUCTURE, THREE-DIMENSIONAL RESISTANCE MEMORY AND METHOD OF FORMING THE SAME 有权通过结构，记忆阵列结构，三维电阻记忆及其形成方法公开(公告)号：US20150129827A1
公开(公告)日：2015-05-14
申请号：US14488300
申请日：2014-09-17
Applicant: Industrial Technology Research Institute
Inventor： Frederick T. Chen , Tai-Yuan Wu , Yu-Sheng Chen , Wei-Su Chen , Pei-Yi Gu , Yu-De Lin
CPC classification number: H01L45/122 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1683 , H01L45/1691
Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.
Abstract translation: 提供了包括层叠层的三维电阻存储器。 层叠层被封装在电介质层中，并且与封装介电层中的至少一个开口相邻。 至少一个L形可变电阻间隔件设置在邻近层叠层的开口的侧壁的至少一部分上。 电极层填充开口的剩余部分。
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Patent Agency Ranking
3.发明申请MEMORY CELL OF RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF 有权电容随机存取存储器的存储单元及其制造方法公开(公告)号：US20150021542A1
公开(公告)日：2015-01-22
申请号：US14510135
申请日：2014-10-09
Applicant: Industrial Technology Research Institute
Inventor： Heng-Yuan Lee , Pei-Yi Gu , Yu-Sheng Chen
CPC classification number: H01L45/1233 , H01L27/2436 , H01L45/08 , H01L45/1253 , H01L45/146 , H01L45/1641
Abstract: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. The second buffer layer reacts with oxygen from the first buffer layer more strongly than the first buffer layer reacts with oxygen from the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.
Abstract translation: 提供了一种电阻随机存取存储器的存储单元及其制造方法。 该方法包括以下步骤。 形成第一电极。 在第一电极上形成金属氧化物层。 电极缓冲层叠层形成在金属氧化物层上，具有第一缓冲层和第二缓冲层，第一缓冲层位于第二缓冲层和金属氧化物层之间。 第二缓冲层与第一缓冲层的氧比第一缓冲层与来自金属氧化物层的氧反应更加强烈。 在电极缓冲层叠层上形成第二电极层。
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4.发明授权Memory cell of resistive random access memory and manufacturing method thereof 有权电阻随机存取存储器的存储单元及其制造方法公开(公告)号：US09385314B2
公开(公告)日：2016-07-05
申请号：US14510135
申请日：2014-10-09
Applicant: Industrial Technology Research Institute
Inventor： Heng-Yuan Lee , Pei-Yi Gu , Yu-Sheng Chen
CPC classification number: H01L45/1233 , H01L27/2436 , H01L45/08 , H01L45/1253 , H01L45/146 , H01L45/1641
Abstract: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. The second buffer layer reacts with oxygen from the first buffer layer more strongly than the first buffer layer reacts with oxygen from the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.
Abstract translation: 提供了一种电阻随机存取存储器的存储单元及其制造方法。 该方法包括以下步骤。 形成第一电极。 在第一电极上形成金属氧化物层。 电极缓冲层叠层形成在金属氧化物层上，具有第一缓冲层和第二缓冲层，第一缓冲层位于第二缓冲层和金属氧化物层之间。 第二缓冲层与第一缓冲层的氧比第一缓冲层与来自金属氧化物层的氧反应更加强烈。 在电极缓冲层叠层上形成第二电极层。
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5.发明申请MEMORY CELL OF RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF 审中-公开电容随机存取存储器的存储单元及其制造方法公开(公告)号：US20130105758A1
公开(公告)日：2013-05-02
申请号：US13719245
申请日：2012-12-19
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Heng-Yuan Lee , Pei-Yi Gu , Yu-Sheng Chen
IPC: H01L45/00
CPC classification number: H01L45/145 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1641
Abstract: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. An oxidation reaction between the second buffer layer and the metal oxide layer is relatively easier than an oxidation reaction between the first buffer layer and the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.
Abstract translation: 提供了一种电阻随机存取存储器的存储单元及其制造方法。 该方法包括以下步骤。 形成第一电极。 在第一电极上形成金属氧化物层。 电极缓冲层叠层形成在金属氧化物层上，具有第一缓冲层和第二缓冲层，第一缓冲层位于第二缓冲层和金属氧化物层之间。 第二缓冲层和金属氧化物层之间的氧化反应比第一缓冲层和金属氧化物层之间的氧化反应相对容易。 在电极缓冲层叠层上形成第二电极层。
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6.发明授权Via structure, memory array structure, three-dimensional resistance memory and method of forming the same 有权通孔结构，存储阵列结构，三维电阻记忆及其形成方法公开(公告)号：US09257641B2
公开(公告)日：2016-02-09
申请号：US14488300
申请日：2014-09-17
Applicant: Industrial Technology Research Institute
Inventor： Frederick T. Chen , Tai-Yuan Wu , Yu-Sheng Chen , Wei-Su Chen , Pei-Yi Gu , Yu-De Lin
CPC classification number: H01L45/122 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1683 , H01L45/1691
Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.
Abstract translation: 提供了包括层叠层的三维电阻存储器。 层叠层被封装在电介质层中，并且与封装介电层中的至少一个开口相邻。 至少一个L形可变电阻间隔件设置在邻近层叠层的开口的侧壁的至少一部分上。 电极层填充开口的剩余部分。
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公开(公告)号：US09178143B2
公开(公告)日：2015-11-03
申请号：US13952678
申请日：2013-07-29
Applicant: Industrial Technology Research Institute
Inventor： Frederick T. Chen , Pei-Yi Gu
CPC classification number: H01L45/1253 , H01L27/2409 , H01L27/249 , H01L45/08 , H01L45/1226 , H01L45/1266 , H01L45/145 , H01L45/146
Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
Abstract translation: 提供了包括至少一个反应层，至少一个电极和至少一个电阻变化材料的电阻式存储器结构。 反应层沿第一方向和第二方向延伸。 电极至少沿着第三方向延伸，其中第一方向，第二方向和第三方向彼此不同。 电阻变化材料的至少一部分设置在反应层和电极之间。 当离子从电阻变化材料扩散到反应层或从反应层扩散到电阻变化材料时，电阻变化材料的电阻变化。
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