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公开(公告)号：US20210265805A1
公开(公告)日：2021-08-26
申请号：US17169037
申请日：2021-02-05
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN
Abstract: A light source based on integrated silicon photonics includes a die of a silicon substrate having at least one chip site configured with a surface region, a trench region, and a first stopper region located separately between the surface region and the trench region. The trench region is configured to be a depth lower than the surface region. The light source includes a laser diode chip having a p-side facing the chip site and a n-side being distal to the chip site. The p-side includes a gain region bonded to the trench region, an electrode region bonded to the surface region, and an isolation region engaged with the stopper region to isolate the gain region from the electrode region. The light source also includes a conductor layer in the die configured to connect the gain region to an anode electrode and separately connect the electrode region to a cathode electrode.
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Patent Agency Ranking
公开(公告)号：US20210273408A1
公开(公告)日：2021-09-02
申请号：US16805526
申请日：2020-02-28
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN , Brian TAYLOR
Abstract: A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least
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公开(公告)号：US20220085575A1
公开(公告)日：2022-03-17
申请号：US17024473
申请日：2020-09-17
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN
Abstract: A semiconductor optical amplifier for high-power operation includes a gain medium having a multilayer structure sequentially laid with a P-layer, an active layer, a N-layer from an upper portion to a lower portion in cross-section thereof. The gain medium is extendedly laid with a length L from a front facet to a back facet. The active layer includes multiple well layers formed by undoped semiconductor material and multiple barrier layers formed by n-doped semiconductor materials. Each well layer is sandwiched by a pair of barrier layers. The front facet is characterized by a first reflectance Rf and the back facet is characterized by a second reflectance Rb. The gain medium has a mirror loss αm about 40-200 cm−1 given by: αm=(½L)ln{1/(Rf×Rb)}.
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公开(公告)号：US20220285906A1
公开(公告)日：2022-09-08
申请号：US17191410
申请日：2021-03-03
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN
Abstract: A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet with low reflectivity and a backend facet with anti-reflective characteristics. The laser device further includes a wavelength tuner formed with waveguides in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.
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公开(公告)号：US20220255295A1
公开(公告)日：2022-08-11
申请号：US17168916
申请日：2021-02-05
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN
IPC: H01S5/068 , H01S5/343 , H01S5/028 , H01S5/10 , H01S5/0234
Abstract: A high-power tunable laser includes a gain medium configured to emit light and amplify light intensity. The gain medium has a length equal to or greater than 1.5 mm between a backend and a frontend configured to be an output port for outputting light with amplified intensity. The high-power tunable laser further includes a wavelength tuner optically coupled to the backend to receive light from the gain medium and configured to tune wavelength for the light and have a high-reflectivity reflector to reflect the light with a tuned wavelength back to the gain medium.
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公开(公告)号：US20220013978A1
公开(公告)日：2022-01-13
申请号：US16922622
申请日：2020-07-07
Applicant: INPHI CORPORATION
Inventor： Xiaoguang HE , Radhakrishnan L. NAGARAJAN
Abstract: A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.
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