Method of forming a flexible thin film transistor display device with a metal foil substrate
    1.
    发明申请
    Method of forming a flexible thin film transistor display device with a metal foil substrate 审中-公开
    用金属箔基板形成柔性薄膜晶体管显示装置的方法

    公开(公告)号:US20040053431A1

    公开(公告)日:2004-03-18

    申请号:US10459032

    申请日:2003-06-11

    CPC classification number: H01L27/1262 H01L27/1214 H01L27/1218 H01L29/78603

    Abstract: A method of forming a flexible thin film transistor (TFT) display device. A metal foil serving as a flexible metal substrate of a display device is provided, wherein the metal foil is an aluminum alloy foil, a titanium foil or a titanium alloy foil. The thickness of the metal foil is 0.05null0.8 mm. An insulation layer is formed on the flexible metal substrate. A thin film transistor (TFT) array is formed on the insulation layer. In addition, the aluminum alloy foil can include magnesium of 0.01null1% wt and/or silicon of 0.01null1% wt and the titanium alloy foil can include aluminum of 0.01null20% wt and/or molybdenum of 0.01null20% wt.

    Abstract translation: 一种形成柔性薄膜晶体管(TFT)显示装置的方法。 提供了用作显示装置的柔性金属基板的金属箔,其中金属箔是铝合金箔,钛箔或钛合金箔。 金属箔的厚度为0.05〜0.8mm。 在柔性金属基板上形成绝缘层。 在绝缘层上形成薄膜晶体管(TFT)阵列。 此外,铝合金箔可以含有0.01〜1重量%的镁和/或0.01〜1重量%的硅,钛合金箔可以含有0.01〜20重量%的铝和/或0.01〜20重量%的钼 。

Patent Agency Ranking