Abstract:
A method of forming a flexible thin film transistor (TFT) display device. A metal foil serving as a flexible metal substrate of a display device is provided, wherein the metal foil is an aluminum alloy foil, a titanium foil or a titanium alloy foil. The thickness of the metal foil is 0.05null0.8 mm. An insulation layer is formed on the flexible metal substrate. A thin film transistor (TFT) array is formed on the insulation layer. In addition, the aluminum alloy foil can include magnesium of 0.01null1% wt and/or silicon of 0.01null1% wt and the titanium alloy foil can include aluminum of 0.01null20% wt and/or molybdenum of 0.01null20% wt.