公开(公告)号：US20040188685A1

公开(公告)日：2004-09-30

申请号：US10439442

申请日：2003-05-16

Applicant: Industrial Technology Research Institute

Inventor： Chiung-Wei Lin ,  Yung-Hui Yeh

IPC: H01L029/76

CPC classification number: H01L29/78696 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78669

Abstract: A TFT with a microcrystalline film. The channel is composed by a microcrystalline silicon layer and an amorphous silicon layer. The microcrystalline silicon layer is disposed near the gate electrode as the first channel layer, providing a current flow path in a horizontal orientation. The amorphous silicon layer is disposed away from the gate electrode as the second channel layer, providing a current flow path in a vertical orientation. Accordingly, the driving current of the transistor can be elevated due to the high conductivity of the microcrystalline silicon layer. Moreover, unnecessary current occurring when the transistor is switched off is reduced due to the high resistance of the amorphous silicon layer.

Abstract translation: 具有微晶薄膜的TFT。 该通道由微晶硅层和非晶硅层构成。 微晶硅层设置在栅极附近作为第一沟道层，提供水平取向的电流流动路径。 将非晶硅层设置为远离栅电极作为第二沟道层，提供垂直取向的电流流动路径。 因此，由于微晶硅层的高导电性，可以提高晶体管的驱动电流。 此外，由于非晶硅层的高电阻，晶体管截止时产生的不必要的电流降低。

公开(公告)号：US20040053431A1

公开(公告)日：2004-03-18

申请号：US10459032

申请日：2003-06-11

Applicant: Industrial Technology Research Institute

Inventor： Chich Shang Chang ,  Wen-Tung Wang ,  Yuan-Tung Dai ,  Chiung-Wei Lin ,  Chi-Lin Chen ,  Tsung-Neng Liao ,  Chi-Shen Lee

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L27/1262 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

Abstract: A method of forming a flexible thin film transistor (TFT) display device. A metal foil serving as a flexible metal substrate of a display device is provided, wherein the metal foil is an aluminum alloy foil, a titanium foil or a titanium alloy foil. The thickness of the metal foil is 0.05null0.8 mm. An insulation layer is formed on the flexible metal substrate. A thin film transistor (TFT) array is formed on the insulation layer. In addition, the aluminum alloy foil can include magnesium of 0.01null1% wt and/or silicon of 0.01null1% wt and the titanium alloy foil can include aluminum of 0.01null20% wt and/or molybdenum of 0.01null20% wt.

Abstract translation: 一种形成柔性薄膜晶体管（TFT）显示装置的方法。 提供了用作显示装置的柔性金属基板的金属箔，其中金属箔是铝合金箔，钛箔或钛合金箔。 金属箔的厚度为0.05〜0.8mm。 在柔性金属基板上形成绝缘层。 在绝缘层上形成薄膜晶体管（TFT）阵列。 此外，铝合金箔可以含有0.01〜1重量％的镁和/或0.01〜1重量％的硅，钛合金箔可以含有0.01〜20重量％的铝和/或0.01〜20重量％的钼 。

公开(公告)号：US20040253797A1

公开(公告)日：2004-12-16

申请号：US10648290

申请日：2003-08-27

Applicant: Industrial Technology Research Institute

Inventor： Shun-Fa Huang ,  Chi-Lin Chen ,  Chiung-Wei Lin

IPC: H01L021/20 ,  H01L021/36 ,  H01L029/76

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/6675 ,  H01L29/78609

Abstract: The present invention relates to a heating plate crystallization method used in the crystallization process for the poly-silicon thin-film transistor, and more particularly, the present invention relates to a heating plate crystallization method by using a pulsed rapid thermal annealing process (PRTP) By means of the characteristic provided by the present invention, namely, the heating plate area has a better absorption rate to the infrared rays and has a high thermal stability. The heating plate area is used for absorbing the infrared rays, and after the heating, the energy is indirectly transferred to the amorphous layer via a thermal conduction method so that the amorphous layer will be rapidly crystallized to form the poly-silicon. Furthermore, the present invention uses the pulsed rapid thermal annealing process (PRTP) using the infrared rays to instantly heat, to selectively heat the materials by taking the advantage that different materials have different absorption rates to the infrared rays. However, the glass substrate and the amorphous cannot effectively absorb the infrared rays so that the glass substrate will not be broken while the process temperature of the heating plate area is excessively high (>70null C.). Therefore, the most effective rapid thermal crystallization can be achieved.

Abstract translation: 本发明涉及用于多晶硅薄膜晶体管的结晶工艺中的加热板结晶方法，更具体地说，本发明涉及使用脉冲快速热退火工艺（PRTP）的加热板结晶方法， 通过本发明提供的特征，即加热板区域对红外线具有更好的吸收率并具有高的热稳定性。 加热板区域用于吸收红外线，并且在加热之后，能量通过热传导方法间接转移到非晶层，使得非晶层将快速结晶以形成多晶硅。 此外，本发明使用红外线的脉冲快速热退火工艺（PRTP）立即加热，通过利用不同材料对红外线具有不同吸收率的优点来选择性地加热材料。 然而，玻璃基板和非晶体不能有效地吸收红外线，使得当加热板区域的处理温度过高（> 70℃）时玻璃基板不会断裂。 因此，可以实现最有效的快速热结晶。