公开(公告)号：US20150249078A1

公开(公告)日：2015-09-03

申请号：US14628823

申请日：2015-02-23

Applicant: Infineon Technologies AG

Inventor： Yiqun Cao ,  Ulrich Glaser ,  Magnus-Maria Hell ,  Julien Lebon ,  Michael Mayerhofer ,  Andreas Meiser ,  Matthias Stecher ,  Joost Willemen

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L27/0292 ,  H02H9/046

Abstract: An integrated circuit having an ESD protection structure is described. One embodiment includes a circuit section interconnected with a first terminal and with a second terminal and being operable at voltage differences between the first terminal and second terminal of greater than +10 V and less than −10 V. The integrated circuit additionally includes an ESD protection structure operable to protect the circuit section against electrostatic discharge between the first terminal and the second terminal. The ESD protection structure is operable with voltage differences between the first and second terminals of greater than +10 V and less than −10 V without triggering. The ESD protection structure is electrically and optically coupled to a photon source such that photons emitted by the photon source upon ESD pulse loading are absorbable in the ESD protection structure and an avalanche breakdown is initiatable by electron-hole pairs generated by the absorbed photons.

Abstract translation: 描述具有ESD保护结构的集成电路。 一个实施例包括与第一端子和第二端子互连的电路部分，并且可在第一端子和第二端子之间的电压差大于+ 10V且小于-10V的情况下工作。集成电路还包括ESD保护 结构可操作以保护电路部分免受第一端子和第二端子之间的静电放电。 ESD保护结构可以在第一和第二端子之间的电压差大于+10V且小于-10V而不触发。 ESD保护结构电光学耦合到光子源，使得在ESD脉冲负载时由光子源发射的光子在ESD保护结构中是可吸收的，并且雪崩击穿可由吸收的光子产生的电子 - 空穴对引发。

公开(公告)号：US20190394064A1

公开(公告)日：2019-12-26

申请号：US16443583

申请日：2019-06-17

Applicant: Infineon Technologies AG

Inventor： Magnus-Maria Hell ,  Dieter Metzner

IPC: H04L12/40 ,  H04L12/413

Abstract: Driver apparatus for a differential bus and corresponding methodA driver apparatus for a differential bus is provided, having a first transistor and a fourth transistor which are connected in order to drive the bus to a dominant state, and a second transistor and a third transistor which are connected in order to drive the bus to a recessive state. The driver apparatus also comprises a collision detection circuit which is set up to detect a collision state on the bus on the basis of measurements of currents through at least one transistor of the first, second, third and fourth transistors.

公开(公告)号：US09705026B2

公开(公告)日：2017-07-11

申请号：US15009271

申请日：2016-01-28

Applicant: Infineon Technologies AG

Inventor： Joost Willemen ,  Michael Mayerhofer ,  Ulrich Glaser ,  Yiqun Cao ,  Andreas Meiser ,  Magnus-Maria Hell ,  Matthias Stecher ,  Julien Lebon

IPC: H01L21/00 ,  H01L31/173 ,  H01L27/02 ,  H01L27/06 ,  H01L27/15 ,  H01L29/808 ,  H02H3/20

CPC classification number: H01L31/173 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/15 ,  H01L29/808 ,  H02H3/20

Abstract: A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.

公开(公告)号：US20160225932A1

公开(公告)日：2016-08-04

申请号：US15009271

申请日：2016-01-28

Applicant: Infineon Technologies AG

Inventor： Joost Willemen ,  Michael Mayerhofer ,  Ulrich Glaser ,  Yiqun Cao ,  Andreas Meiser ,  Magnus-Maria Hell ,  Matthias Stecher ,  Julien Lebon

IPC: H01L31/173 ,  H01L27/15 ,  H01L27/06 ,  H01L29/808 ,  H02H3/20 ,  H01L27/02

CPC classification number: H01L31/173 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/15 ,  H01L29/808 ,  H02H3/20

Abstract: A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.

Abstract translation: 一种触发半导体器件中的雪崩击穿的方法包括提供电耦合和配置成发射辐射的辅助半导体器件之间的光耦合，该半导体器件包括埋在第一导电类型的第一层之下的pn结， 设置在表面和第一层之间的半导体本体和第二导电类型的掺杂半导体区域。 电耦合和光耦合包括触发由辅助半导体器件发射的辐射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。

公开(公告)号：US11567892B2

公开(公告)日：2023-01-31

申请号：US17230526

申请日：2021-04-14

Applicant: Infineon Technologies AG

Inventor： Tobias Islinger ,  Magnus-Maria Hell ,  Maximilian Mangst ,  Eric Pihet ,  Jens Repp

IPC: G06F13/42 ,  G06F13/38 ,  G06F1/3234 ,  G06F13/40 ,  G06F13/30

Abstract: In accordance with an embodiment, an integrated driver circuit includes: a first connection and a second connection configured to be connected to a control chip; at least one bus connection configured to be connected to a bus line; and a control circuit. The control circuit is configured to operate in a first mode or a second mode; to output a reception signal at the second connection in the second mode, where the reception signal represents a bus signal received at the bus connection; to assume a state of low power consumption in the first mode; to change from the first mode to the second mode when a first command is detected at the first connection or at the second connection; and to change from the second mode to the first mode when the bus signal does not indicate any data for a predefined period of time.

公开(公告)号：US10700886B2

公开(公告)日：2020-06-30

申请号：US16443583

申请日：2019-06-17

Applicant: Infineon Technologies AG

Inventor： Magnus-Maria Hell ,  Dieter Metzner

IPC: H04L12/413 ,  H04W74/08 ,  H03F3/45 ,  H04L12/40

Abstract: A driver apparatus for a differential bus is provided, having a first transistor and a fourth transistor which are connected in order to drive the bus to a dominant state, and a second transistor and a third transistor which are connected in order to drive the bus to a recessive state. The driver apparatus also comprises a collision detection circuit which is set up to detect a collision state on the bus on the basis of measurements of currents through at least one transistor of the first, second, third and fourth transistors.

公开(公告)号：US10545903B2

公开(公告)日：2020-01-28

申请号：US16287496

申请日：2019-02-27

Applicant: Infineon Technologies AG

Inventor： Dieter Metzner ,  Magnus-Maria Hell

IPC: H04L25/12 ,  G06F13/40 ,  H04B3/06

Abstract: In accordance with an embodiment, a method includes receiving a transmission signal; converting the received transmission signal into a corresponding bus signal by driving an output stage of a transmitter having a plurality of switches, where a switching behavior of the plurality of switches of the output stage is dependent on a parameter set; converting the bus signal into a corresponding reception signal, wherein an edge of the reception signal is delayed by a loop delay relative to a corresponding edge in the transmission signal; determining a measurement value for the loop delay; and altering the parameter set in order to adapt the loop delay.

公开(公告)号：US20190272248A1

公开(公告)日：2019-09-05

申请号：US16287496

申请日：2019-02-27

Applicant: Infineon Technologies AG

Inventor： Dieter Metzner ,  Magnus-Maria Hell

IPC: G06F13/40 ,  H04L25/12 ,  H04B3/06

Abstract: In accordance with an embodiment, a method includes receiving a transmission signal; converting the received transmission signal into a corresponding bus signal by driving an output stage of a transmitter having a plurality of switches, where a switching behavior of the plurality of switches of the output stage is dependent on a parameter set; converting the bus signal into a corresponding reception signal, wherein an edge of the reception signal is delayed by a loop delay relative to a corresponding edge in the transmission signal; determining a measurement value for the loop delay; and altering the parameter set in order to adapt the loop delay

公开(公告)号：US20180287642A1

公开(公告)日：2018-10-04

申请号：US15941534

申请日：2018-03-30

Applicant: Infineon Technologies AG

Inventor： Magnus-Maria Hell

IPC: H04B1/04 ,  H03K5/1252 ,  H04L12/40

CPC classification number: H04B1/0475 ,  H03K5/1252 ,  H04L12/40 ,  H04L12/40169 ,  H04L2012/40215

Abstract: An electronic circuit includes a transmitter with a first output configured to be connected to a first signal line of a signal bus, a second output configured to be connected to a second signal line of a signal bus, and an input configured to receive an input signal; and a ringing suppression circuit with a third output configured to be connected to the first signal line, and a fourth output configured to be connected to the second signal line. The transmitter is configured to operate in one of a first operating state or a second operating state dependent on the input signal. The ringing suppression circuit is configured to detect a change from the first operating state to the second operating state of the transmitter, and to operate in a ringing suppression mode for a predefined time period in response to detecting the change.

公开(公告)号：US20150069424A1

公开(公告)日：2015-03-12

申请号：US14020391

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Joost Willemen ,  Michael Mayerhofer ,  Ulrich Glaser ,  Yiqun Cao ,  Andreas Meiser ,  Magnus-Maria Hell ,  Matthias Stecher ,  Julien Lebon

IPC: H01L31/173 ,  H01L27/02

CPC classification number: H01L31/173 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/15 ,  H01L29/808 ,  H02H3/20

Abstract: A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer.

Abstract translation: 半导体部件包括被配置为发射辐射的辅助半导体器件。 半导体部件还包括半导体器件。 辅助半导体器件和半导体器件之间的电耦合和光耦合被配置为触发辅助半导体器件的辐射发射，并通过吸收半导体器件中的辐射来触发半导体器件中的雪崩击穿。 半导体器件包括埋在半导体主体的表面下方的第一导电类型的第一层和布置在表面和第一层之间的第二导电类型的掺杂半导体区域之间的pn结。