公开(公告)号：US09824972B2

公开(公告)日：2017-11-21

申请号：US15383731

申请日：2016-12-19

Applicant: Infineon Technologies AG

Inventor： Mark James Harrison ,  Martin Sporn

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/285

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/3065 ,  H01L21/6836 ,  H01L21/76841 ,  H01L23/4827 ,  H01L23/5226 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.

公开(公告)号：US10573611B2

公开(公告)日：2020-02-25

申请号：US16163006

申请日：2018-10-17

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark James Harrison ,  Anton Pugatschow

IPC: H01L23/00 ,  H01L21/683

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

公开(公告)号：US20190051624A1

公开(公告)日：2019-02-14

申请号：US16163006

申请日：2018-10-17

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark James Harrison ,  Anton Pugatschow

IPC: H01L23/00

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

公开(公告)号：US09553016B2

公开(公告)日：2017-01-24

申请号：US14324890

申请日：2014-07-07

Applicant: Infineon Technologies AG

Inventor： Mark James Harrison ,  Martin Sporn

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L23/482 ,  H01L21/683 ,  H01L23/532

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/3065 ,  H01L21/6836 ,  H01L21/76841 ,  H01L23/4827 ,  H01L23/5226 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.

Abstract translation: 一种形成半导体器件的方法的方法包括提供具有与顶表面相对的底表面的半导体衬底以及设置在顶表面处的电路。 该方法还包括在半导体衬底的底表面上形成具有第一金属的第一金属层。 第一金属层通过沉积粘合促进剂然后沉积第一金属而形成。

公开(公告)号：US20160005647A1

公开(公告)日：2016-01-07

申请号：US14324890

申请日：2014-07-07

Applicant: Infineon Technologies AG

Inventor： Mark James Harrison ,  Martin Sporn

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/3065 ,  H01L21/6836 ,  H01L21/76841 ,  H01L23/4827 ,  H01L23/5226 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.

Abstract translation: 一种形成半导体器件的方法的方法包括提供具有与顶表面相对的底表面的半导体衬底以及设置在顶表面处的电路。 该方法还包括在半导体衬底的底表面上形成具有第一金属的第一金属层。 第一金属层通过沉积粘合促进剂然后沉积第一金属而形成。