公开(公告)号：US20180226289A1

公开(公告)日：2018-08-09

申请号：US15745235

申请日：2015-09-23

Applicant: Intel Corporation

Inventor： Jeffery D. BIELEFELD ,  Manish CHANDHOK ,  Asad IQBAL ,  John D. BROOKS

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/764 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295

Abstract: A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.