公开(公告)号：US20230317563A1

公开(公告)日：2023-10-05

申请号：US17711008

申请日：2022-03-31

Applicant: Intel Corporation

Inventor： Payam AMIN ,  Tofizur RAHMAN ,  Bozidar MARINKOVIC ,  Santhosh Kumar KODURI ,  Tugba KOKER AYKOL ,  Jayeeta SEN ,  David BENNETT ,  Conor P. PULS ,  Clay MORTENSEN ,  Leslie L. CHAN ,  Hoang DOAN ,  Dolly Natalia RUIZ AMADOR

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696 ,  H01L23/5283 ,  H01L23/53257 ,  H01L21/76898

Abstract: Embodiments disclosed herein include a via structure and methods of forming the via structure. In an embodiment, the via structure comprises a substrate and an opening through the substrate. In an embodiment, the opening has a first portion and a second portion under the first portion. In an embodiment, the via structure further comprises a lining on sidewalls of the first portion of the opening, and a via filling the opening. In an embodiment, the via has a first region with a first width and a second region with a second width, wherein the first width is smaller than the second width.