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公开(公告)号:US20240429221A1
公开(公告)日:2024-12-26
申请号:US18339685
申请日:2023-06-22
Applicant: Intel Corporation
Inventor: Bernd Waidhas , Thomas Wagner , Georg Seidemann , Nicolas Richaud , Manisha Dutta , Georgios Dogiamis , Harshit Dhakad , Michael Langenbuch
Abstract: Glass layers and capacitors for use with integrated circuit packages are disclosed. An example integrated circuit (IC) package includes a semiconductor die, a glass layer, and a capacitor electrically coupled to the semiconductor die, at least one side of the capacitor enclosed by the glass layer, the capacitor positioned closer to the glass layer than the semiconductor die is to the glass layer.
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公开(公告)号:US20240421150A1
公开(公告)日:2024-12-19
申请号:US18209358
申请日:2023-06-13
Applicant: Intel Corporation
Inventor: Ritesh Agarwal , Harshit Dhakad , Krzysztof Domanski
IPC: H01L27/02
Abstract: Techniques and mechanisms for selectively disabling functionality of a power clamp circuit which is to mitigate damage due to electrostatic discharge (ESD). In an embodiment, a shut-off circuit is coupled to receive a control signal which indicates an actual or expected future power state transition of a load. The power clamp circuit comprises a pull-up circuit and a pull-down circuit which are coupled in series between a first interconnect and a second interconnect, which are to receive a first supply voltage and a second supply voltage, respectively. Based on a filtered version of the control signal, the shut-off circuit generates a first one or more signals to selectively disable the pull-up circuit. The shut-off circuit further generates a second one or more signals, based on the filtered version of the control signal, to selectively disable the pull-down circuit.
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公开(公告)号:US20250007278A1
公开(公告)日:2025-01-02
申请号:US18216447
申请日:2023-06-29
Applicant: Intel Corporation
Inventor: Krzysztof Domanski , Robert Haeussler , Harshit Dhakad
IPC: H02H9/02
Abstract: An integrated circuit (IC) device comprises a conductive contact at a surface of the IC device. First and second circuitry are coupled with the conductive contact. First and second supply lines are coupled with and provide power to the first circuitry, the first supply line providing a first voltage, and the second supply line providing a second voltage. The second circuitry is further coupled with the second supply line and a third supply line. The third supply line is to provide a third voltage and may provide a path for a current associated with an electrostatic discharge (ESD) event. A resistive element is coupled between the first supply line and the third supply line. The resistive element may reduce a current in the first supply line associated with an ESD event.
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公开(公告)号:US20240395800A1
公开(公告)日:2024-11-28
申请号:US18201597
申请日:2023-05-24
Applicant: Intel Corporation
Inventor: Krzysztof Domanski , Harshit Dhakad
IPC: H01L27/02
Abstract: An electrostatic discharge protection circuit, device, system, and apparatus has low-leakage for a large voltage swing of negative current.
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公开(公告)号:US20250006726A1
公开(公告)日:2025-01-02
申请号:US18216442
申请日:2023-06-29
Applicant: Intel Corporation
Inventor: Krzysztof Domanski , Harshit Dhakad
Abstract: An integrated circuit (IC) device comprises a conductive contact at a surface of the IC device. A resistive element is coupled between the conductive contact and first circuitry. Second circuitry is coupled between the resistive element and the conductive contact. The second circuitry is further coupled with a supply line and comprises at least one of a diode or a power clamp. The resistive element is disposed in a first metallization layer of the IC device. A first dielectric layer is adjacent to the first metallization layer. A second metallization layer is adjacent to the first dielectric layer. A height of the first dielectric layer and the second metallization layer is a first distance. A zone overlaps the resistive element, and extends a second distance away from the resistive element. The zone is free of conductive material and the second distance is greater than the first distance.
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公开(公告)号:US20240421591A1
公开(公告)日:2024-12-19
申请号:US18209361
申请日:2023-06-13
Applicant: Intel Corporation
Inventor: Harshit Dhakad , Yossi Shoshany , Sergey Sofer , Suhwan Kim , Krzysztof Domanski
IPC: H02H9/04 , H01L27/02 , H03K19/003
Abstract: Techniques and mechanisms for a DC-DC voltage converter to mitigate a risk of damage to circuitry due to electrostatic discharge (ESD). In an embodiment, a protection circuit of the DC-DC voltage converter comprises a pull-up circuit and a pull-down circuit which are coupled in series between a first interconnect and a second interconnect, which are to receive a first supply voltage and a second supply voltage, respectively. A voltage divider comprises capacitors which are coupled in series with each other between the first interconnect and the second interconnect. Control circuitry is coupled with the voltage divider, and is further coupled to automatically configure a first operational mode based on an ESD event. During the first mode, the pull-up circuit is disabled and the pull-down circuit is enabled. In another embodiment, a resistor-capacitor (RC) circuit automatically transitions the protection circuit from the first mode.
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公开(公告)号:US20240396327A1
公开(公告)日:2024-11-28
申请号:US18201592
申请日:2023-05-24
Applicant: Intel Corporation
Inventor: Krzysztof Domanski , Harshit Dhakad
Abstract: An electrostatic discharge protection circuit, device, system, and apparatus has low-leakage for a large voltage swing of positive current.
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