公开(公告)号：US20220415925A1

公开(公告)日：2022-12-29

申请号：US17358329

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Nicholas THOMSON ,  Kalyan KOLLURU ,  Ayan KAR ,  Rui MA ,  Benjamin ORR ,  Nathan JACK ,  Biswajeet GUHA ,  Brian GREENE ,  Lin HU ,  Chung-Hsun LIN

IPC: H01L27/12 ,  H01L27/02

Abstract: Substrate-less lateral diode integrated circuit structures, and methods of fabricating substrate-less lateral diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin or a stack of nanowires. A plurality of P-type epitaxial structures is over the fin or stack of nanowires. A plurality of N-type epitaxial structures is over the fin or stack of nanowires. One or more spacings are in locations over the fin or stack of nanowires, a corresponding one of the one or more spacings extending between neighboring ones of the plurality of P-type epitaxial structures and the plurality of N-type epitaxial structures.

公开(公告)号：US20220416022A1

公开(公告)日：2022-12-29

申请号：US17357767

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： Nicholas THOMSON ,  Kalyan KOLLURU ,  Ayan KAR ,  Rui MA ,  Benjamin ORR ,  Nathan JACK ,  Biswajeet GUHA ,  Brian GREENE ,  Lin HU ,  Chung-Hsun LIN ,  Sabih OMAR

IPC: H01L29/06 ,  H01L29/423 ,  H01L27/12

Abstract: Substrate-less nanowire-based lateral diode integrated circuit structures, and methods of fabricating substrate-less nanowire-based lateral diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a stack of nanowires. A plurality of P-type epitaxial structures is over the stack of nanowires. A plurality of N-type epitaxial structures is over the stack of nanowires. One or more gate structures is over the stack of nanowires. A semiconductor material is between and in contact with vertically adjacent ones of the stack of nanowires.

公开(公告)号：US20220102385A1

公开(公告)日：2022-03-31

申请号：US17033418

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Biswajeet GUHA ,  Brian GREENE ,  Avyaya JAYANTHINARASIMHAM ,  Ayan KAR ,  Benjamin ORR ,  Chung-Hsun LIN ,  Curtis TSAI ,  Kalyan KOLLURU ,  Kevin FISCHER ,  Lin HU ,  Nathan JACK ,  Nicholas THOMSON ,  Rishabh MEHANDRU ,  Rui MA ,  Sabih OMAR

IPC: H01L27/12

Abstract: Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.