公开(公告)号：US20220199615A1

公开(公告)日：2022-06-23

申请号：US17133024

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Avyaya JAYANTHINARASIMHAM ,  Brian GREENE ,  Suresh Vishwanath

IPC: H01L27/07 ,  H01L27/088 ,  H01L29/861 ,  H01L29/78 ,  H01L29/06

Abstract: Substrate-less vertical diode integrated circuit structures, and methods of fabricating substrate-less vertical diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a semiconductor fin in a dielectric layer, the semiconductor fin having a top and a bottom, and the dielectric layer having a top surface and a bottom surface. A first epitaxial semiconductor structure is on the top of the semiconductor fin. A second epitaxial semiconductor structure is on the bottom of the semiconductor fin. A first conductive contact is on the first epitaxial semiconductor structure. A second conductive contact is on the second epitaxial semiconductor structure.

公开(公告)号：US20220102385A1

公开(公告)日：2022-03-31

申请号：US17033418

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Biswajeet GUHA ,  Brian GREENE ,  Avyaya JAYANTHINARASIMHAM ,  Ayan KAR ,  Benjamin ORR ,  Chung-Hsun LIN ,  Curtis TSAI ,  Kalyan KOLLURU ,  Kevin FISCHER ,  Lin HU ,  Nathan JACK ,  Nicholas THOMSON ,  Rishabh MEHANDRU ,  Rui MA ,  Sabih OMAR

IPC: H01L27/12

Abstract: Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.