公开(公告)号：US10692847B2

公开(公告)日：2020-06-23

申请号：US15755533

申请日：2015-08-31

Applicant: Intel Corporation

Inventor： Daniel Sobieski ,  Kristof Darmawikarta ,  Sri Ranga Sai Boyapati ,  Merve Celikkol ,  Kyu Oh Lee ,  Kemal Aygun ,  Zhiguo Qian

IPC: H01L25/18 ,  H01L23/14 ,  H01L25/065 ,  H01L23/538 ,  H01L23/00

Abstract: Discussed generally herein are methods and devices for multichip packages that include an inorganic interposer. A device can include a substrate including low density interconnect circuitry therein, an inorganic interposer on the substrate, the inorganic interposer including high density interconnect circuitry electrically connected to the low density interconnect circuitry, the inorganic interposer including inorganic materials, and two or more chips electrically connected to the inorganic interposer, the two or more chips electrically connected to each other through the high density interconnect circuitry.

公开(公告)号：US20180240788A1

公开(公告)日：2018-08-23

申请号：US15755533

申请日：2015-08-31

Applicant: Intel Corporation

Inventor： Daniel Sobieski ,  Kristof Darmawikarta ,  Sri Ranga Sai Boyapati ,  Merve Celikkol ,  Kyu Oh Lee ,  Kemal Aygun ,  Zhiguo Qian

IPC: H01L25/18 ,  H01L23/14 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00

Abstract: Discussed generally herein are methods and devices for multichip packages that include an inorganic interposer. A device can include a substrate including low density interconnect circuitry therein, an inorganic interposer on the substrate, the inorganic interposer including high density interconnect circuitry electrically connected to the low density interconnect circuitry, the inorganic interposer including inorganic materials, and two or more chips electrically connected to the inorganic interposer, the two or more chips electrically connected to each other through the high density interconnect circuitry.